RM24C128DS-LSNI-T

Product Overview

Category

RM24C128DS-LSNI-T belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as microcontrollers, embedded systems, and consumer electronics.

Characteristics

• Non-volatile: The RM24C128DS-LSNI-T retains stored data even when power is removed.
• High capacity: It has a storage capacity of 128 kilobits (16 kilobytes).
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.
• Fast access time: The RM24C128DS-LSNI-T provides quick access to stored data.
• Reliable: It offers high endurance and data retention capabilities.

Package

The RM24C128DS-LSNI-T is available in a small outline integrated circuit (SOIC) package. This package ensures easy integration into various electronic systems.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in a compact form factor.

Packaging/Quantity

The RM24C128DS-LSNI-T is typically packaged in reels or tubes, with a quantity of 2500 units per reel/tube.

Specifications

• Memory Capacity: 128 kilobits (16 kilobytes)
• Interface: I2C (Inter-Integrated Circuit)
• Operating Voltage: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 200 years
• Endurance: 1 million write cycles

Detailed Pin Configuration

The RM24C128DS-LSNI-T has a standard 8-pin configuration:

1. VCC: Power supply voltage
2. SDA: Serial data input/output
3. SCL: Serial clock input
4. WP: Write protect pin
5. GND: Ground
6. NC: No connection
7. NC: No connection
8. VSS: Ground

Functional Features

• Random access: The RM24C128DS-LSNI-T allows random access to any location within the memory array.
• Byte-level read/write: It supports byte-level read and write operations, providing flexibility in data manipulation.
• Hardware write protection: The WP pin can be used to protect the memory from accidental writes.
• Page write mode: This feature enables faster data transfer by allowing multiple bytes to be written in a single operation.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity for storing large amounts of data.
• Low power consumption extends battery life in portable devices.
• Fast access time enables quick retrieval of stored information.
• Reliable endurance and data retention characteristics.

Disadvantages

• Limited storage capacity compared to other non-volatile memory options.
• Higher cost per kilobyte compared to some alternative models.

Working Principles

The RM24C128DS-LSNI-T utilizes electrically erasable programmable read-only memory (EEPROM) technology. It stores data using floating-gate transistors that can be electrically programmed and erased. The I2C interface allows for easy communication with the device, enabling read and write operations.

Detailed Application Field Plans

The RM24C128DS-LSNI-T finds applications in various fields, including: 1. Industrial automation systems: Used for storing configuration data and parameters. 2. Automotive electronics: Stores critical information such as calibration data and vehicle settings. 3. Smart meters: Enables data logging and energy consumption tracking. 4. Medical devices: Stores patient data and device settings. 5. Consumer electronics: Used for firmware storage and data logging in devices like smartwatches and IoT devices.

Detailed and Complete Alternative Models

1. RM24C256DS-LSNI-T: Offers double the storage capacity of RM24C128DS-LSNI-T (256 kilobits).
2. AT24C128C-SSHL-T: Similar capacity and features, but from a different manufacturer.
3. CAT24C128WI-GT3: Provides compatibility with different interfaces such as SPI (Serial Peripheral Interface).

These alternative models offer similar functionality and can be considered based on specific requirements and compatibility needs.

In conclusion, the RM24C128DS-LSNI-T is a non-volatile memory device that provides reliable data storage in various electronic applications. With its high capacity, low power consumption, and fast access time, it offers advantages for data-intensive systems. However, it has limitations in terms of storage capacity and cost compared to some alternative models. Its working principle relies on EEPROM technology, enabling easy integration and communication through the I2C interface. The RM24C128DS-LSNI-T finds applications