AS4C64M16D2B-25BCN

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory module
• Characteristics:
  • High-density memory chip
  • Low power consumption
  • Fast data transfer rate
• Package: BGA (Ball Grid Array)
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Tray, 250 units per tray

Specifications

• Part Number: AS4C64M16D2B-25BCN
• Organization: 64 Meg x 16
• Voltage: 2.5V
• Speed: 200 MHz
• Interface: Parallel
• Operating Temperature: -40°C to +85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The AS4C64M16D2B-25BCN has a total of 96 pins arranged in a specific configuration. The pinout diagram and description of each pin are as follows:

1. VDD - Power supply voltage
2. VSS - Ground
3. A0-A12 - Address inputs
4. BA0-BA1 - Bank address inputs
5. DQ0-DQ15 - Data input/output
6. WE - Write enable
7. CAS - Column address strobe
8. RAS - Row address strobe
9. CS - Chip select
10. CLK - Clock input
11. CKE - Clock enable
12. DQM0-DQM1 - Data mask
13. DM - Data mask
14. NC - No connection
15. VREF - Reference voltage

(Note: This is a simplified representation. Please refer to the datasheet for the complete pin configuration.)

Functional Features

• High-density storage capacity
• Fast data access and transfer speed
• Low power consumption
• Reliable and durable
• Easy integration into memory modules

Advantages

• Large storage capacity allows for storing a vast amount of data
• Fast data transfer rate enhances system performance
• Low power consumption helps in reducing energy usage
• Reliable and durable design ensures long-term operation
• Easy integration into memory modules simplifies the manufacturing process

Disadvantages

• Higher cost compared to other memory technologies
• Limited scalability beyond certain capacities
• Susceptible to data loss in case of power failure (requires backup solutions)

Working Principles

The AS4C64M16D2B-25BCN is based on Dynamic Random Access Memory (DRAM) technology. It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. The memory cells are organized in a matrix of rows and columns, with each cell being accessed by its unique row and column address. When a read or write operation is performed, the appropriate row and column addresses are selected, and the data is transferred through the data bus.

Detailed Application Field Plans

The AS4C64M16D2B-25BCN is widely used in various electronic devices and systems that require high-density memory. Some of the common application fields include: - Personal computers - Laptops and notebooks - Servers and data centers - Networking equipment - Consumer electronics (e.g., smartphones, tablets) - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• AS4C64M16D2B-25BIN: Similar specifications but with industrial temperature range (-40°C to +105°C)
• AS4C64M16D2B-25BCN-T: Tape and reel packaging option
• AS4C64M16D2B-25BCN-F: Lead-free version with RoHS compliance

(Note: This list includes only a few alternative models. Please refer to the manufacturer's catalog for a complete list of alternatives.)

In conclusion, the AS4C64M16D2B-25BCN is a high-density memory chip belonging to the category of integrated circuits. It offers fast data transfer rates, low power consumption, and reliable performance. With its versatile applications and various alternative models available, it serves as a crucial component in numerous electronic devices and systems.