AS4C64M8D3L-12BINTR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory module
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Large storage capacity
• Package: BGA (Ball Grid Array)
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Bulk packaging, typically sold in reels or trays

Specifications

• Part Number: AS4C64M8D3L-12BINTR
• Organization: 64 Megabit x 8
• Speed: 12 ns
• Voltage: 3.3V
• Interface: Parallel
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The AS4C64M8D3L-12BINTR has a total of 60 pins arranged in a specific configuration. The pinout is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. A0
12. A1
13. A2
14. A3
15. A4
16. A5
17. A6
18. A7
19. A8
20. A9
21. A10
22. A11
23. A12
24. A13
25. A14
26. A15
27. A16
28. A17
29. A18
30. A19
31. A20
32. A21
33. A22
34. A23
35. A24
36. A25
37. A26
38. A27
39. A28
40. A29
41. A30
42. A31
43. /CAS
44. /RAS
45. /WE
46. /OE
47. /CS0
48. /CS1
49. /CS2
50. /CS3
51. VSS
52. VDD
53. VDDQ
54. VSSQ
55. NC
56. NC
57. NC
58. NC
59. NC
60. NC

Functional Features

• High-speed data access and transfer
• Supports burst mode operations
• Low power self-refresh mode for reduced power consumption
• On-die termination (ODT) for improved signal integrity
• Auto precharge function for efficient memory management

Advantages and Disadvantages

Advantages: - High-speed performance allows for faster data processing - Large storage capacity enables storing a significant amount of data - Low power consumption helps in reducing energy usage - On-die termination improves signal quality and reduces noise

Disadvantages: - Relatively higher cost compared to other memory technologies - Sensitive to electrical noise and requires proper shielding and grounding

Working Principles

The AS4C64M8D3L-12BINTR is based on the dynamic random access memory (DRAM) technology. It stores data in capacitors within each memory cell, which needs to be periodically refreshed to maintain the stored information. The memory cells are organized in a matrix, with rows and columns forming the addressable locations. Data is accessed by specifying the row and column addresses.

Detailed Application Field Plans

The AS4C64M8D3L-12BINTR is commonly used in various electronic devices and systems that require high-speed and large-capacity memory. Some of the application fields include: - Personal computers - Servers - Networking equipment - Industrial automation systems - Medical devices - Automotive electronics

Detailed and Complete Alternative Models

• AS4C64M8D3L-12BCNTR
• AS4C64M8D3L-12BCINTR
• AS4C64M8D3L-12BIN
• AS4C64M8D3L-12BINT
• AS4C64M8D3L-12BINTR-T