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BLF178P,112
Product Overview
Category
The BLF178P,112 belongs to the category of RF power transistors.
Use
It is used in high-power RF applications such as industrial, scientific, and medical (ISM) equipment, broadcast transmitters, and radar systems.
Characteristics
- High power handling capability
- Broadband frequency range
- High efficiency
- Excellent linearity
Package
The BLF178P,112 comes in a ceramic package for enhanced thermal performance and reliability.
Essence
This transistor is essential for amplifying RF signals with high power requirements.
Packaging/Quantity
The BLF178P,112 is typically available in tape and reel packaging with a quantity of 250 units per reel.
Specifications
- Frequency Range: 470 MHz to 860 MHz
- Output Power: Up to 600 Watts
- Gain: 18 dB
- Efficiency: 70%
- Operating Voltage: 32V
- Operating Temperature: -65°C to +200°C
Detailed Pin Configuration
The BLF178P,112 has a 4-pin flange package with the following pin configuration: 1. Gate 1 2. Drain 3. Source 4. Gate 2
Functional Features
- High power amplification
- Wide frequency coverage
- Robust and reliable operation
- Suitable for various modulation schemes
Advantages and Disadvantages
Advantages
- High power handling capability
- Wide frequency range
- High efficiency
- Reliable ceramic package
Disadvantages
- Higher cost compared to lower power transistors
- Requires careful thermal management due to high power dissipation
Working Principles
The BLF178P,112 operates based on the principles of field-effect transistors (FETs), utilizing its high-power handling capability and gain to amplify RF signals across a wide frequency range.
Detailed Application Field Plans
The BLF178P,112 is widely used in the following application fields: - Broadcast transmitters - Radar systems - Industrial RF heating equipment - Medical diathermy machines - Scientific research equipment
Detailed and Complete Alternative Models
Some alternative models to BLF178P,112 include: - BLF888A - BLF578XR - BLF278
In conclusion, the BLF178P,112 is a high-power RF transistor with broad frequency coverage and high efficiency, making it suitable for various high-power RF applications. Its robust design and reliable performance make it a popular choice in the industry.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de BLF178P,112 en soluciones técnicas
What is the maximum operating frequency of BLF178P,112?
- The maximum operating frequency of BLF178P,112 is typically up to 500 MHz.
What is the maximum output power of BLF178P,112?
- The maximum output power of BLF178P,112 is approximately 160 watts.
What are the typical applications for BLF178P,112?
- BLF178P,112 is commonly used in industrial, scientific, and medical (ISM) applications, as well as in radio and television broadcasting.
What is the recommended supply voltage for BLF178P,112?
- The recommended supply voltage for BLF178P,112 is typically around 50 volts.
What is the typical gain of BLF178P,112?
- The typical gain of BLF178P,112 is around 17 dB.
What are the thermal characteristics of BLF178P,112?
- BLF178P,112 has a junction temperature of 200°C and a thermal resistance of 0.7°C/W.
What are the key features of BLF178P,112?
- BLF178P,112 features high efficiency, high ruggedness, and excellent thermal stability.
What are the recommended bias conditions for BLF178P,112?
- The recommended bias conditions for BLF178P,112 include a quiescent current of 150 mA and a quiescent voltage of 32 volts.
What are the typical intermodulation distortion characteristics of BLF178P,112?
- The typical intermodulation distortion characteristics of BLF178P,112 are around -30 dBc at 10 watts average power.
What are the common failure modes of BLF178P,112?
- Common failure modes of BLF178P,112 include overvoltage, overcurrent, and excessive heat dissipation.