BLF6G10L-260PRN:11

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Amplification of Radio Frequency Signals - Characteristics: High Power, High Frequency, Low Distortion - Package: LDMOST plastic overmolded - Essence: High-performance RF power transistor - Packaging/Quantity: Typically packaged in reels of 800 units

Specifications: - Frequency Range: 2400 - 2500 MHz - Output Power: 10 W - Gain: 13 dB - Efficiency: 55% - Voltage: 26 V - Current: 1.5 A

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Not connected - Pin 5: Not connected

Functional Features: - High gain and efficiency - Excellent linearity - Thermally enhanced package for improved reliability - RoHS compliant

Advantages and Disadvantages: - Advantages: - High performance - Reliable operation - RoHS compliant - Disadvantages: - Higher cost compared to some alternatives - Sensitive to static discharge

Working Principles: The BLF6G10L-260PRN:11 operates based on the principles of field-effect transistors (FETs), utilizing its high-frequency and high-power capabilities to amplify RF signals with low distortion.

Detailed Application Field Plans: This transistor is ideal for use in applications such as: - Radar systems - Wireless communication equipment - Satellite communication systems - Test and measurement equipment

Detailed and Complete Alternative Models: - MRF6VP2600H - MRFE6VP61K25H

Conclusion: The BLF6G10L-260PRN:11 RF power transistor offers high performance and reliability, making it suitable for a range of RF amplification applications. While it may have a higher cost and sensitivity to static discharge, its advantages outweigh these limitations in many scenarios.

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