BLF6G20LS-180RN,11

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Amplification of Radio Frequency Signals - Characteristics: High Power, High Frequency, Low Noise - Package: SMD (Surface Mount Device) - Essence: Power Amplification for RF Applications - Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications: - Frequency Range: 1800-2000 MHz - Output Power: 20W - Gain: 16dB - Efficiency: 65% - Voltage: 32V - Current: 6A

Detailed Pin Configuration: - Pin 1: RF Input - Pin 2: Ground - Pin 3: RF Output - Pin 4: Vcc

Functional Features: - High Power Gain - High Efficiency - Broadband Operation - Thermally Enhanced Package

Advantages: - High Power Output - Wide Frequency Range - Compact Size - Good Thermal Performance

Disadvantages: - Higher Cost Compared to Lower Power Alternatives - Sensitive to Voltage Fluctuations

Working Principles: The BLF6G20LS-180RN,11 operates on the principle of amplifying radio frequency signals using a combination of active and passive components. The input signal is amplified and delivered to the output with high power gain and efficiency.

Detailed Application Field Plans: - Cellular Base Stations - Radar Systems - Wireless Communication Equipment - Satellite Communication Systems

Detailed and Complete Alternative Models: - BLF6G10LS-180RN,11 - BLF6G30LS-180RN,11 - BLF6G50LS-180RN,11

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