BLF8G10LS-270V,118

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Amplification of radio frequency signals in communication systems - Characteristics: High power, high efficiency, and high gain - Package: Surface Mount - Essence: Provides high power amplification for RF signals - Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications: - Frequency Range: 470-860 MHz - Output Power: 270W - Efficiency: 30% - Gain: 10dB - Voltage: 28V

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Not connected - Pin 5: Not connected - Pin 6: Not connected

Functional Features: - High power amplification - High efficiency - Broad frequency range - Reliable performance

Advantages: - High power output - High efficiency - Suitable for a wide frequency range

Disadvantages: - Requires careful thermal management due to high power output - Sensitive to voltage fluctuations

Working Principles: The BLF8G10LS-270V,118 operates on the principle of amplifying radio frequency signals using a field-effect transistor (FET) configuration. When a signal is applied to the gate terminal, it modulates the conductivity between the source and drain terminals, resulting in amplified output at the drain terminal.

Detailed Application Field Plans: - Telecommunication base stations - Broadcast transmitters - Radar systems - Wireless infrastructure

Detailed and Complete Alternative Models: - BLF888A - BLF578XR - BLF2425M6L

This product belongs to the category of RF power transistors and is primarily used for amplifying radio frequency signals in communication systems. It is characterized by its high power, high efficiency, and high gain, and is packaged in a surface mount format with 800 units per reel. The BLF8G10LS-270V,118 has a frequency range of 470-860 MHz, an output power of 270W, and operates at 28V. Its functional features include high power amplification, high efficiency, and reliable performance. While it offers advantages such as high power output and suitability for a wide frequency range, it requires careful thermal management and is sensitive to voltage fluctuations. The working principle involves the amplification of radio frequency signals using a field-effect transistor (FET) configuration. This product finds applications in telecommunication base stations, broadcast transmitters, radar systems, and wireless infrastructure. Additionally, alternative models such as BLF888A, BLF578XR, and BLF2425M6L provide similar functionalities.