BDW53B-S

Product Overview

Belongs to: Power Transistors
Category: Electronic Components
Use: Amplification and switching of electronic signals
Characteristics: High power handling capacity, low collector-emitter saturation voltage
Package: TO-220AB
Essence: NPN Epitaxial Silicon Transistor
Packaging/Quantity: Available in reels or tubes, quantity varies

Specifications

• Collector-Emitter Voltage (VCEO): 100V
• Collector Current (IC): 8A
• Power Dissipation (Pd): 80W
• DC Current Gain (hFE): 25 - 160
• Transition Frequency (ft): 30MHz

Detailed Pin Configuration

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Features

• High current gain
• Low saturation voltage
• Fast switching speed

Advantages

• High power handling capability
• Suitable for high-frequency applications
• Low collector-emitter saturation voltage

Disadvantages

• Sensitive to temperature variations
• Requires careful thermal management

Working Principles

BDW53B-S operates as an NPN transistor, amplifying and switching electronic signals. When a small current flows into the base terminal, it controls a larger current flowing between the collector and emitter terminals.

Detailed Application Field Plans

1. Audio Amplification: Used in audio amplifiers due to its high power handling capacity.
2. Switching Circuits: Employed in switching circuits for controlling high-power devices.
3. Motor Control: Utilized in motor control applications due to its fast switching speed.

Detailed and Complete Alternative Models

1. BDW52B-S: Similar specifications with slightly lower power dissipation.
2. BDW54B-S: Higher power dissipation and collector-emitter voltage compared to BDW53B-S.

This comprehensive entry provides a detailed overview of the BDW53B-S power transistor, covering its product information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.