Bourns Inc.
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BDW54B-S
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BDW54B-S

Product Overview

Belongs to: Semiconductor Devices
Category: Power Transistor
Use: Amplification and Switching
Characteristics: High power dissipation, high current capability, low saturation voltage
Package: TO-220AB
Essence: NPN Epitaxial Silicon Transistor
Packaging/Quantity: Bulk packaging, quantity varies

Specifications

  • Collector-Emitter Voltage (VCEO): 100V
  • Collector Current (IC): 8A
  • Total Power Dissipation (PTOT): 90W
  • Transition Frequency (FT): 30MHz
  • DC Current Gain (hFE): 15-60

Detailed Pin Configuration

  1. Base (B)
  2. Collector (C)
  3. Emitter (E)

Functional Features

  • High current capability
  • Low saturation voltage
  • Fast switching speed

Advantages

  • Suitable for high power applications
  • Reliable performance
  • Wide operating temperature range

Disadvantages

  • May require heat sink in high power applications
  • Sensitive to overvoltage conditions

Working Principles

The BDW54B-S operates as a bipolar junction transistor (BJT) in the NPN configuration. When a small current flows into the base terminal, it controls a larger current between the collector and emitter terminals, allowing for amplification and switching of electrical signals.

Detailed Application Field Plans

  1. Audio Amplifiers
  2. Power Supplies
  3. Motor Control Systems
  4. Lighting Control Systems

Detailed and Complete Alternative Models

  1. BDW54C-S
  2. BDW54D-S
  3. BDW54E-S

Note: The alternative models may have different specifications and characteristics, so careful consideration is advised when selecting an alternative.

This comprehensive entry provides a detailed overview of the BDW54B-S, including its product category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de BDW54B-S en soluciones técnicas

  1. What is the BDW54B-S transistor used for?

    • The BDW54B-S transistor is commonly used in high-power amplifier and switching applications.

  2. What are the key specifications of the BDW54B-S transistor?

    • The BDW54B-S transistor is a PNP Darlington transistor with a maximum collector current of 8A, a maximum collector-emitter voltage of 100V, and a maximum power dissipation of 80W.

  3. Can the BDW54B-S be used for audio amplifier applications?

    • Yes, the BDW54B-S can be used in audio amplifier circuits due to its high power handling capabilities.

  4. What are the typical operating conditions for the BDW54B-S transistor?

    • The BDW54B-S transistor typically operates at a collector current of 4A and a collector-emitter voltage of 5V.

  5. Is the BDW54B-S suitable for motor control applications?

    • Yes, the BDW54B-S can be used in motor control circuits due to its high current and voltage ratings.

  6. What are the recommended heat sink requirements for the BDW54B-S transistor?

    • It is recommended to use a heat sink with a thermal resistance of less than 1°C/W to ensure proper heat dissipation.

  7. Can the BDW54B-S be used in automotive applications?

    • Yes, the BDW54B-S is suitable for automotive applications such as electronic ignition systems and motor control in vehicles.

  8. What are the typical circuit configurations for the BDW54B-S transistor?

    • The BDW54B-S is commonly used in common emitter and Darlington pair configurations in various technical solutions.

  9. Are there any specific considerations for driving the BDW54B-S transistor?

    • It is important to provide adequate base drive current to ensure proper saturation and performance of the BDW54B-S transistor.

  10. Where can I find detailed application notes for using the BDW54B-S in technical solutions?

    • Detailed application notes for the BDW54B-S can be found in the manufacturer's datasheet and application guides, which provide comprehensive information on its usage in technical solutions.