S29PL032J55BFI123

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
  • Low power consumption
• Package: BGA (Ball Grid Array)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Individually packaged, quantity varies based on customer requirements

Specifications

• Manufacturer: XYZ Corporation
• Memory Type: NOR Flash
• Memory Size: 32 Megabits (4 Megabytes)
• Organization: 4M x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 55 ns
• Erase/Program Suspend/Erase Suspend: Yes
• Burst Mode: Yes
• Sector Architecture: Uniform 64 KByte sectors with 4 KByte sub-sectors
• Data Retention: 20 years

Detailed Pin Configuration

The S29PL032J55BFI123 has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. OE#
45. BYTE#
46. VSS
47. NC
48. VCC

Functional Features

• High-speed read and write operations for efficient data access
• Erase and program suspend functionality for flexible operation
• Burst mode support for faster data transfer
• Uniform sector architecture for easy management of data storage
• Low power consumption for energy-efficient operation
• Reliable data retention for long-term storage needs

Advantages

• Large storage capacity allows for storing a significant amount of data
• High-speed operations enable quick data retrieval and storage
• Low power consumption helps in extending battery life for portable devices
• Erase and program suspend features provide flexibility during data operations
• Uniform sector architecture simplifies data management tasks

Disadvantages

• Limited compatibility with certain device interfaces due to parallel interface design
• Relatively higher cost compared to other memory options with similar capacities
• Susceptible to physical damage if mishandled or exposed to extreme conditions

Working Principles

The S29PL032J55BFI123 is based on NOR Flash memory technology. It utilizes a parallel interface to communicate with the host device. The memory cells store data using floating-gate transistors, which can retain their charge even when power is removed. This non-volatile characteristic allows for reliable data storage.

During read operations, the requested data is accessed by specifying the appropriate address lines. The data is then transferred through the data output pins. Write operations involve providing the desired data along with the corresponding address and control signals.

The erase operation clears the memory cells in sectors, allowing them to be reprogrammed with new data. The erase and program suspend features provide flexibility by allowing the interruption of ongoing operations without losing data.

Detailed Application Field Plans

The S29PL032J55BFI123 is widely used in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Embedded Systems: Used for firmware storage in microcontrollers and other embedded systems.
2. Consumer Electronics: Found in digital cameras, set-top boxes, and portable media players for storing user data and firmware.
3. Automotive: Utilized in automotive infotainment systems, navigation devices, and engine control units for reliable data storage.
4. Industrial Automation: Used in industrial control systems, PLCs (Programmable Logic Controllers), and HMI (Human-Machine Interface) devices.
5. Networking Equipment: Found in routers, switches, and network storage devices for firmware and configuration storage.

Alternative Models

• S29GL032