MR25H10CDF

Product Overview

Category

MR25H10CDF belongs to the category of non-volatile memory devices.

Use

It is primarily used for data storage and retrieval in electronic systems.

Characteristics

• Non-volatile: Retains stored data even when power is removed.
• High capacity: Offers a storage capacity of 1 Megabit (128K x 8 bits).
• Serial interface: Utilizes a serial peripheral interface (SPI) for communication.
• Low power consumption: Operates at low power levels, making it suitable for battery-powered devices.

Package

MR25H10CDF is available in a compact surface-mount package.

Essence

The essence of MR25H10CDF lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each reel/tube containing a specific quantity of MR25H10CDF devices.

Specifications

• Memory Capacity: 1 Megabit (128K x 8 bits)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 100 years
• Endurance: 100,000 write cycles

Detailed Pin Configuration

The MR25H10CDF has the following pin configuration:

1. Chip Select (CS)
2. Serial Clock (SCK)
3. Serial Data Input (SI)
4. Serial Data Output (SO)
5. Write Protect (WP)
6. Ground (GND)
7. Power Supply (VCC)

Functional Features

• High-speed data transfer: Supports fast data transfer rates over the SPI interface.
• Write protection: The Write Protect (WP) pin allows for hardware-based write protection.
• Flexible addressing: Supports both byte and page-level addressing modes.
• Software and hardware protection: Provides software and hardware protection mechanisms to prevent accidental data corruption.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for a wide range of applications.
• Low power consumption extends battery life in portable devices.
• Compact package size allows for space-efficient integration into electronic systems.

Disadvantages

• Limited endurance compared to some other non-volatile memory technologies.
• Relatively slower write speeds compared to volatile memory technologies.

Working Principles

MR25H10CDF utilizes flash memory technology to store and retrieve data. It employs a serial peripheral interface (SPI) for communication with the host system. The data is written to and read from the memory cells using electrical charges, which are trapped within the floating gate structure of the flash memory cells.

Detailed Application Field Plans

MR25H10CDF finds applications in various fields, including but not limited to: 1. Consumer electronics: Used in smart TVs, set-top boxes, and gaming consoles for data storage purposes. 2. Industrial automation: Employed in control systems and data loggers for storing critical information. 3. Automotive: Utilized in automotive infotainment systems and instrument clusters for data storage and firmware updates. 4. Medical devices: Integrated into medical equipment for storing patient data and device configurations. 5. Internet of Things (IoT): Incorporated into IoT devices for local data storage and firmware updates.

Detailed and Complete Alternative Models

Some alternative models to MR25H10CDF include: 1. MR25H40CDF: Offers a higher storage capacity of 4 Megabits (512K x 8 bits). 2. MR25H256CDF: Provides a lower storage capacity of 256 Kilobits (32K x 8 bits) for more cost-sensitive applications. 3. MR25H05CDF: Offers a lower storage capacity of 512 Kilobits (64K x 8 bits) for smaller-scale projects.

(Note: The above alternative models are examples and not an exhaustive list.)

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