MB85AS4MTPF-G-BCERE1

Product Overview

Category: Non-volatile RAM (NVRAM)

Use: The MB85AS4MTPF-G-BCERE1 is a non-volatile RAM product that combines the benefits of both RAM and flash memory. It provides high-speed read/write access like RAM, while also retaining data even when power is disconnected, similar to flash memory.

Characteristics: - High-speed read/write access - Non-volatile storage - Low power consumption - Wide operating temperature range - High endurance and data retention

Package: The MB85AS4MTPF-G-BCERE1 is available in a compact surface-mount package, making it suitable for space-constrained applications.

Essence: This NVRAM product offers a reliable and efficient solution for storing critical data in various electronic devices, ensuring data integrity even during power interruptions.

Packaging/Quantity: The MB85AS4MTPF-G-BCERE1 is typically packaged in reels or trays, with quantities varying based on customer requirements.

Specifications

• Capacity: 4 Megabits (512 Kilobytes)
• Interface: I2C (2-wire serial interface)
• Operating Voltage: 1.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: 10^12 read/write cycles

Detailed Pin Configuration

The MB85AS4MTPF-G-BCERE1 features an 8-pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. SDA: Serial data input/output
4. SCL: Serial clock input
5. WP: Write protect (optional)
6. NC: No connection
7. NC: No connection
8. VBAT: Backup power supply voltage (optional)

Functional Features

• High-speed read/write access: The MB85AS4MTPF-G-BCERE1 offers fast data transfer rates, allowing for efficient read and write operations.
• Non-volatile storage: Data stored in this NVRAM product is retained even when power is disconnected, ensuring data integrity.
• Low power consumption: The device operates with low power consumption, making it suitable for battery-powered applications.
• Wide operating temperature range: The MB85AS4MTPF-G-BCERE1 can withstand extreme temperatures, enabling its use in various environments.
• High endurance and data retention: With a high endurance of 10^12 read/write cycles and data retention of up to 10 years, the NVRAM ensures long-term reliability.

Advantages and Disadvantages

Advantages: - Combines the benefits of RAM and flash memory - Fast read/write access - Non-volatile storage - Low power consumption - Wide operating temperature range - High endurance and data retention

Disadvantages: - Limited capacity compared to other storage solutions - Relatively higher cost per unit compared to traditional RAM

Working Principles

The MB85AS4MTPF-G-BCERE1 utilizes ferroelectric random-access memory (FeRAM) technology. It stores data by utilizing the unique properties of ferroelectric materials, which can retain their polarization state even without power. This allows for non-volatile storage and eliminates the need for constant power supply to maintain data integrity.

Detailed Application Field Plans

The MB85AS4MTPF-G-BCERE1 finds applications in various fields, including but not limited to: - Industrial automation - Automotive electronics - Smart meters - Medical devices - Wearable devices - Internet of Things (IoT) devices

Detailed and Complete Alternative Models

1. MB85AS4MT: Similar specifications and features, but with a different package type.
2. MB85AS4MTP: Same specifications and features as MB85AS4MTPF-G-BCERE1, but without the write protect (WP) pin.
3. MB85AS4MTPF: Similar to MB85AS4MTPF-G-BCERE1, but without the backup power supply voltage (VBAT) pin.

These alternative models provide flexibility in choosing the most suitable NVRAM solution based on specific application requirements.

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