8525BGLF

Overview

• Category: Electronic Component
• Use: Amplifier
• Characteristics: High gain, low noise
• Package: TO-92
• Essence: Bipolar Junction Transistor (BJT)
• Packaging/Quantity: Bulk packaging, 100 pieces per bag

Specifications and Parameters

• Collector-Emitter Voltage (Vce): 30V
• Collector Current (Ic): 500mA
• Power Dissipation (Pd): 625mW
• DC Current Gain (hfe): 100 - 300
• Transition Frequency (ft): 250MHz
• Operating Temperature Range: -55°C to +150°C

Pin Configuration

The 8525BGLF transistor has three pins:

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Characteristics

• High voltage gain
• Low noise figure
• Fast switching speed
• Good linearity
• Wide frequency response

Advantages and Disadvantages

Advantages: - High gain allows for amplification of weak signals - Low noise figure ensures minimal signal distortion - Fast switching speed enables rapid signal processing

Disadvantages: - Limited power handling capability - Requires careful biasing for optimal performance

Applicable Range of Products

The 8525BGLF transistor is commonly used in electronic devices that require amplification of low-level signals, such as audio amplifiers, radio receivers, and communication systems.

Working Principles

The 8525BGLF is a bipolar junction transistor (BJT) that operates based on the principles of current amplification. It consists of three layers of semiconductor material - the emitter, base, and collector. By controlling the current flowing through the base-emitter junction, the transistor can amplify small input currents or voltages into larger output currents or voltages.

Detailed Application Field Plans

1. Audio Amplifiers: The 8525BGLF can be used in audio amplifiers to amplify weak audio signals from sources such as microphones or musical instruments.
2. Radio Receivers: It is commonly employed in radio receivers to amplify weak radio frequency (RF) signals for demodulation and further processing.
3. Communication Systems: The transistor finds application in communication systems, where it amplifies low-level signals for transmission or reception.

Detailed Alternative Models

• 2N3904
• BC547
• PN2222
• MPSA18
• 2SC945

5 Common Technical Questions and Answers

1. Q: What is the maximum voltage the 8525BGLF can handle? A: The maximum collector-emitter voltage (Vce) is 30V.

2. Q: What is the typical current gain of this transistor? A: The DC current gain (hfe) ranges from 100 to 300.

3. Q: Can I use the 8525BGLF in high-temperature environments? A: Yes, it can operate within a temperature range of -55°C to +150°C.

4. Q: How many pieces are included in each package? A: Each package contains 100 pieces of the 8525BGLF transistor.

5. Q: What is the power dissipation rating of this transistor? A: The maximum power dissipation (Pd) is 625mW.

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