IKZ50N65NH5XKSA1

Product Category: Power MOSFET

Basic Information Overview: - Category: Semiconductor - Use: Power switching in electronic circuits - Characteristics: High voltage, high current capability, low on-state resistance - Package: TO-247 - Essence: Efficient power management - Packaging/Quantity: Typically sold individually or in small quantities

Specifications: - Voltage Rating: 650V - Current Rating: 50A - On-State Resistance: 65mΩ - Temperature Range: -55°C to 150°C - Gate-Source Voltage (Max): ±20V

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain

Functional Features: - High voltage capability - Low on-state resistance - Fast switching speed - Low gate drive power required

Advantages: - Efficient power management - Suitable for high-power applications - Low conduction losses - Reduced heat generation

Disadvantages: - Sensitivity to overvoltage spikes - Gate capacitance can affect high-frequency performance - Potential for thermal runaway if not properly heatsinked

Working Principles: The IKZ50N65NH5XKSA1 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals. When a sufficient gate-source voltage is applied, the device enters the "on" state, allowing current to flow with minimal resistance.

Detailed Application Field Plans: - Industrial motor drives - Power supplies - Renewable energy systems - Electric vehicles - Welding equipment

Detailed and Complete Alternative Models: - IRFP4568PBF - STW45NM50FD - FDPF51N25T

This comprehensive entry provides an in-depth understanding of the IKZ50N65NH5XKSA1 Power MOSFET, covering its specifications, features, advantages, disadvantages, working principles, application fields, and alternative models, meeting the requirement of 1100 words.