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IPB083N15N5LFATMA1
Product Overview
Category
The IPB083N15N5LFATMA1 belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic devices and systems.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The IPB083N15N5LFATMA1 is typically available in a TO-263 package.
Essence
This MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is usually packaged in reels with a specific quantity per reel, as per the manufacturer's specifications.
Specifications
- Drain-Source Voltage (VDS): 150V
- Continuous Drain Current (ID): 83A
- On-Resistance (RDS(on)): 8.5mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 90nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB083N15N5LFATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in high-power applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid control of power flow.
Advantages and Disadvantages
Advantages
- High voltage capability suitable for demanding applications
- Low on-resistance for improved efficiency
- Fast switching speed for precise power control
Disadvantages
- May require careful handling due to its high power capabilities
- Sensitive to overvoltage conditions
Working Principles
The IPB083N15N5LFATMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPB083N15N5LFATMA1 is commonly used in the following applications: - Switched-mode power supplies - Motor control systems - Inverters and converters - Automotive power electronics
Detailed and Complete Alternative Models
Some alternative models to the IPB083N15N5LFATMA1 include: - IPB082N15N3G - IPB084N15N3G - IPB085N15N3G
In conclusion, the IPB083N15N5LFATMA1 is a high-performance power MOSFET with excellent characteristics suitable for a wide range of high-power switching applications.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPB083N15N5LFATMA1 en soluciones técnicas
What is the maximum drain-source voltage of IPB083N15N5LFATMA1?
- The maximum drain-source voltage of IPB083N15N5LFATMA1 is 150V.
What is the continuous drain current rating of IPB083N15N5LFATMA1?
- The continuous drain current rating of IPB083N15N5LFATMA1 is 83A.
What is the on-state resistance (RDS(on)) of IPB083N15N5LFATMA1?
- The on-state resistance (RDS(on)) of IPB083N15N5LFATMA1 is typically 8.5mΩ at VGS = 10V.
What is the gate threshold voltage of IPB083N15N5LFATMA1?
- The gate threshold voltage of IPB083N15N5LFATMA1 is typically 2.5V.
Is IPB083N15N5LFATMA1 suitable for high-frequency switching applications?
- Yes, IPB083N15N5LFATMA1 is suitable for high-frequency switching applications due to its low RDS(on) and fast switching characteristics.
What is the operating temperature range of IPB083N15N5LFATMA1?
- The operating temperature range of IPB083N15N5LFATMA1 is -55°C to 175°C.
Does IPB083N15N5LFATMA1 have built-in ESD protection?
- Yes, IPB083N15N5LFATMA1 has built-in ESD protection, making it more robust in handling electrostatic discharge events.
Can IPB083N15N5LFATMA1 be used in automotive applications?
- Yes, IPB083N15N5LFATMA1 is designed for automotive applications and complies with relevant industry standards.
What package type does IPB083N15N5LFATMA1 come in?
- IPB083N15N5LFATMA1 is available in a TO-263-7 package.
Are there any application notes or reference designs available for using IPB083N15N5LFATMA1 in motor control applications?
- Yes, Infineon provides application notes and reference designs for using IPB083N15N5LFATMA1 in motor control applications, which can be found on their official website.