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IPB120N06S403ATMA1

IPB120N06S403ATMA1

Product Overview

Category

The IPB120N06S403ATMA1 belongs to the category of power MOSFETs.

Use

It is commonly used in applications requiring high power switching and efficient energy management.

Characteristics

  • High current-carrying capability
  • Low on-state resistance
  • Fast switching speed
  • Excellent thermal performance

Package

The IPB120N06S403ATMA1 is typically available in a TO-263 package.

Essence

This MOSFET is essential for controlling high-power circuits with minimal heat dissipation.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 120A
  • On-State Resistance (RDS(on)): 6.4mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB120N06S403ATMA1 typically has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)

Functional Features

  • Low gate charge
  • Enhanced avalanche energy capability
  • Improved dV/dt ruggedness

Advantages and Disadvantages

Advantages

  • High current-handling capacity
  • Low conduction losses
  • Fast switching speed
  • Enhanced thermal performance

Disadvantages

  • Higher cost compared to standard MOSFETs
  • More complex drive circuitry required

Working Principles

The IPB120N06S403ATMA1 operates based on the principle of field-effect control, where the voltage applied to the gate terminal modulates the conductivity between the drain and source terminals, allowing for efficient power regulation and switching.

Detailed Application Field Plans

The IPB120N06S403ATMA1 finds extensive use in various applications, including: - Switch-mode power supplies - Motor control systems - Solar inverters - Electric vehicle powertrains - Industrial automation equipment

Detailed and Complete Alternative Models

Some alternative models to the IPB120N06S403ATMA1 include: - IRF1405PBF - FDP8878 - STP80NF70

In conclusion, the IPB120N06S403ATMA1 is a high-performance power MOSFET that offers exceptional current-handling capabilities, fast switching speeds, and efficient energy management. Its application spans across diverse industries, making it an essential component in modern power electronics.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPB120N06S403ATMA1 en soluciones técnicas

  1. What is the maximum drain-source voltage of IPB120N06S403ATMA1?

    • The maximum drain-source voltage of IPB120N06S403ATMA1 is 60V.
  2. What is the continuous drain current rating of IPB120N06S403ATMA1?

    • The continuous drain current rating of IPB120N06S403ATMA1 is 120A.
  3. What is the on-state resistance (RDS(on)) of IPB120N06S403ATMA1?

    • The on-state resistance (RDS(on)) of IPB120N06S403ATMA1 is typically 6.4mΩ at VGS = 10V.
  4. Can IPB120N06S403ATMA1 be used in automotive applications?

    • Yes, IPB120N06S403ATMA1 is designed for use in automotive applications.
  5. What is the operating temperature range of IPB120N06S403ATMA1?

    • The operating temperature range of IPB120N06S403ATMA1 is -55°C to 175°C.
  6. Does IPB120N06S403ATMA1 have built-in ESD protection?

    • Yes, IPB120N06S403ATMA1 features built-in ESD protection.
  7. What type of package does IPB120N06S403ATMA1 come in?

    • IPB120N06S403ATMA1 is available in a TO-263-7 package.
  8. Is IPB120N06S403ATMA1 suitable for high-frequency switching applications?

    • Yes, IPB120N06S403ATMA1 is suitable for high-frequency switching applications.
  9. What gate-source voltage (VGS) is required for full enhancement of IPB120N06S403ATMA1?

    • A gate-source voltage (VGS) of 10V is typically required for full enhancement of IPB120N06S403ATMA1.
  10. Can IPB120N06S403ATMA1 be used in power management solutions?

    • Yes, IPB120N06S403ATMA1 is commonly used in power management solutions due to its high current handling capability and low on-state resistance.