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IPB260N06N3GATMA1
Product Overview
Category
The IPB260N06N3GATMA1 belongs to the category of power MOSFETs.
Use
It is used as a high-performance switching device in various electronic circuits and applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
- Excellent thermal performance
Package
The IPB260N06N3GATMA1 is typically available in a TO-263-3 package.
Essence
This MOSFET is essential for efficient power management and control in electronic systems.
Packaging/Quantity
It is commonly packaged in reels with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 50A
- On-Resistance (RDS(on)): 26mΩ
- Power Dissipation (PD): 200W
- Gate-Source Voltage (VGS): ±20V
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The pin configuration of the IPB260N06N3GATMA1 typically includes three pins: gate, drain, and source. The specific pinout can be found in the manufacturer's datasheet.
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid response in switching circuits.
Advantages
- Excellent thermal performance ensures reliability in high-power applications.
- Low gate charge reduces drive requirements and enhances switching efficiency.
Disadvantages
- May require careful consideration of driving circuitry due to its high current and voltage capabilities.
- Sensitive to electrostatic discharge (ESD) and requires proper handling during assembly.
Working Principles
The IPB260N06N3GATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.
Detailed Application Field Plans
The IPB260N06N3GATMA1 is widely used in: - Switching power supplies - Motor control - DC-DC converters - Inverters - Battery management systems
Detailed and Complete Alternative Models
- IRF3205
- FDP8870
- STP55NF06L
- AOB260N06L
In conclusion, the IPB260N06N3GATMA1 is a high-performance power MOSFET with excellent characteristics and functional features, making it suitable for a wide range of power management applications.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPB260N06N3GATMA1 en soluciones técnicas
What is the maximum drain-source voltage of IPB260N06N3GATMA1?
- The maximum drain-source voltage of IPB260N06N3GATMA1 is 60V.
What is the continuous drain current rating of IPB260N06N3GATMA1?
- The continuous drain current rating of IPB260N06N3GATMA1 is 120A.
What is the on-state resistance (RDS(on)) of IPB260N06N3GATMA1?
- The on-state resistance (RDS(on)) of IPB260N06N3GATMA1 is typically 0.0026 ohms.
Can IPB260N06N3GATMA1 be used in automotive applications?
- Yes, IPB260N06N3GATMA1 is suitable for automotive applications.
What is the operating temperature range of IPB260N06N3GATMA1?
- The operating temperature range of IPB260N06N3GATMA1 is -55°C to 175°C.
Does IPB260N06N3GATMA1 require a heat sink for proper operation?
- It is recommended to use a heat sink for optimal performance of IPB260N06N3GATMA1, especially in high-power applications.
What type of package does IPB260N06N3GATMA1 come in?
- IPB260N06N3GATMA1 is available in a TO-263-7 package.
Is IPB260N06N3GATMA1 suitable for switching applications?
- Yes, IPB260N06N3GATMA1 is well-suited for switching applications due to its low RDS(on) and high current rating.
What gate-source voltage is required to fully enhance IPB260N06N3GATMA1?
- A gate-source voltage of 10V is typically required to fully enhance IPB260N06N3GATMA1.
Can IPB260N06N3GATMA1 be used in power supply designs?
- Yes, IPB260N06N3GATMA1 is commonly used in power supply designs due to its high current handling capability and low on-state resistance.