Consulte las especificaciones para obtener detalles del producto.
IPB80N04S3H4ATMA1
Introduction
The IPB80N04S3H4ATMA1 is a power MOSFET belonging to the category of semiconductor devices. This device is commonly used in various electronic applications due to its unique characteristics and performance.
Basic Information Overview
- Category: Power MOSFET
- Use: Switching and amplification in electronic circuits
- Characteristics: High voltage capability, low on-resistance, fast switching speed
- Package: TO263-3 (D2PAK)
- Essence: Efficient power management and control
- Packaging/Quantity: Typically packaged in reels or tubes containing multiple units
Specifications
- Voltage Rating: 40V
- Current Rating: 80A
- On-Resistance: 3.4mΩ
- Gate Charge: 110nC
- Operating Temperature: -55°C to 175°C
- Mounting Type: Surface Mount
Detailed Pin Configuration
The IPB80N04S3H4ATMA1 features a standard pin configuration with three pins: 1. Gate (G): Input for controlling the MOSFET's conductivity 2. Drain (D): Connection to the load or power supply 3. Source (S): Common reference point for the MOSFET
Functional Features
- Low On-Resistance: Enables efficient power transfer and reduced heat dissipation
- Fast Switching Speed: Facilitates rapid switching in electronic circuits
- High Voltage Capability: Suitable for high-power applications
Advantages and Disadvantages
Advantages
- High efficiency in power management
- Fast response time
- Low power dissipation
Disadvantages
- Sensitivity to static electricity
- Requires careful handling during assembly
Working Principles
The IPB80N04S3H4ATMA1 operates based on the principles of field-effect transistors. When a voltage is applied to the gate terminal, it modulates the conductivity between the drain and source terminals, allowing for controlled current flow through the device.
Detailed Application Field Plans
The IPB80N04S3H4ATMA1 finds extensive use in various applications, including: - Switching power supplies - Motor control systems - Automotive electronics - Industrial automation
Detailed and Complete Alternative Models
- IPB80P03P4L11AKSA1: Complementary P-channel MOSFET with similar specifications
- IRF840: General-purpose N-channel MOSFET with comparable characteristics
- STP80NF03L: Alternative N-channel MOSFET suitable for high-power applications
In conclusion, the IPB80N04S3H4ATMA1 is a versatile power MOSFET with exceptional performance characteristics, making it an ideal choice for a wide range of electronic applications.
[Word count: 394]
Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPB80N04S3H4ATMA1 en soluciones técnicas
What is the maximum drain-source voltage of IPB80N04S3H4ATMA1?
- The maximum drain-source voltage of IPB80N04S3H4ATMA1 is 40V.
What is the continuous drain current rating of IPB80N04S3H4ATMA1?
- The continuous drain current rating of IPB80N04S3H4ATMA1 is 80A.
What is the on-state resistance (RDS(on)) of IPB80N04S3H4ATMA1?
- The on-state resistance (RDS(on)) of IPB80N04S3H4ATMA1 is typically 4mΩ at VGS = 10V.
What is the gate threshold voltage of IPB80N04S3H4ATMA1?
- The gate threshold voltage of IPB80N04S3H4ATMA1 is typically 2V.
What is the power dissipation of IPB80N04S3H4ATMA1?
- The power dissipation of IPB80N04S3H4ATMA1 is 300W.
Is IPB80N04S3H4ATMA1 suitable for automotive applications?
- Yes, IPB80N04S3H4ATMA1 is designed for automotive applications.
What is the operating temperature range of IPB80N04S3H4ATMA1?
- The operating temperature range of IPB80N04S3H4ATMA1 is -55°C to 175°C.
Does IPB80N04S3H4ATMA1 have built-in protection features?
- Yes, IPB80N04S3H4ATMA1 has built-in overcurrent and thermal protection.
Can IPB80N04S3H4ATMA1 be used in high-frequency switching applications?
- Yes, IPB80N04S3H4ATMA1 is suitable for high-frequency switching applications.
What are some typical technical solutions where IPB80N04S3H4ATMA1 can be applied?
- IPB80N04S3H4ATMA1 can be used in motor control, power supplies, DC-DC converters, and automotive systems.