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IPB80N06S207ATMA1
Introduction
The IPB80N06S207ATMA1 is a power MOSFET belonging to the category of electronic components. This device is widely used in various applications due to its unique characteristics and performance.
Basic Information Overview
- Category: Power MOSFET
- Use: Switching and amplification in electronic circuits
- Characteristics: High current capability, low on-resistance, fast switching speed
- Package: TO-263-3 (D2PAK)
- Essence: Efficient power management and control
- Packaging/Quantity: Typically available in reels or tubes containing multiple units
Specifications
- Voltage Rating: 60V
- Current Rating: 80A
- On-Resistance: 8mΩ
- Gate Charge: 45nC
- Operating Temperature Range: -55°C to 175°C
- Mounting Type: Surface Mount
- Technology: N-channel
Detailed Pin Configuration
The IPB80N06S207ATMA1 features a standard pin configuration for a TO-263-3 package: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High current handling capability
- Low on-resistance for minimal power loss
- Fast switching speed for efficient operation
- Enhanced thermal performance for reliability
Advantages and Disadvantages
Advantages
- Excellent power dissipation capability
- Suitable for high-current applications
- Low conduction losses
- Robust and reliable design
Disadvantages
- Higher gate charge compared to some alternative models
- Sensitive to electrostatic discharge (ESD)
Working Principles
The IPB80N06S207ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material. When a voltage is applied to the gate terminal, it controls the flow of current between the drain and source terminals, enabling efficient switching and amplification.
Detailed Application Field Plans
The IPB80N06S207ATMA1 finds extensive use in various applications, including: - Switching power supplies - Motor control - Electronic lighting systems - Audio amplifiers - Automotive electronics
Detailed and Complete Alternative Models
Some alternative models to the IPB80N06S207ATMA1 include: - IRF840 - FDP8870 - STP80NF03L - AUIRFN8403
In conclusion, the IPB80N06S207ATMA1 power MOSFET offers high-performance characteristics suitable for a wide range of electronic applications, making it a popular choice among designers and engineers.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPB80N06S207ATMA1 en soluciones técnicas
What is the maximum drain-source voltage of IPB80N06S207ATMA1?
- The maximum drain-source voltage of IPB80N06S207ATMA1 is 60V.
What is the continuous drain current rating of IPB80N06S207ATMA1?
- The continuous drain current rating of IPB80N06S207ATMA1 is 80A.
What is the on-resistance of IPB80N06S207ATMA1?
- The on-resistance of IPB80N06S207ATMA1 is typically 8.5mΩ at Vgs=10V.
What is the gate threshold voltage of IPB80N06S207ATMA1?
- The gate threshold voltage of IPB80N06S207ATMA1 is typically 2V.
What is the power dissipation of IPB80N06S207ATMA1?
- The power dissipation of IPB80N06S207ATMA1 is 300W.
What are the typical applications for IPB80N06S207ATMA1?
- IPB80N06S207ATMA1 is commonly used in motor control, power supplies, and DC-DC converters.
What is the operating temperature range of IPB80N06S207ATMA1?
- The operating temperature range of IPB80N06S207ATMA1 is -55°C to 175°C.
Is IPB80N06S207ATMA1 RoHS compliant?
- Yes, IPB80N06S207ATMA1 is RoHS compliant.
What is the package type of IPB80N06S207ATMA1?
- IPB80N06S207ATMA1 comes in a TO263-3 package.
Does IPB80N06S207ATMA1 have built-in ESD protection?
- Yes, IPB80N06S207ATMA1 has built-in ESD protection up to 2kV.