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IPB80N06S407ATMA1
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IPB80N06S407ATMA1

Product Overview

Category

The IPB80N06S407ATMA1 belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic devices and systems.

Characteristics

  • High voltage capability
  • Low gate charge
  • Fast switching speed
  • Low on-resistance

Package

The IPB80N06S407ATMA1 is typically available in a TO-263-3 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 80A
  • On-Resistance (RDS(on)): 8.5mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 110nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB80N06S407ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low gate charge enables fast switching, reducing power loss.
  • Low on-resistance minimizes conduction losses.

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for diverse applications
  • Low on-resistance for efficient power handling
  • Fast switching speed for improved performance

Disadvantages

  • May require careful consideration of heat dissipation due to high current capabilities
  • Sensitivity to static discharge requires proper handling during assembly

Working Principles

The IPB80N06S407ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current through the device.

Detailed Application Field Plans

Power Supplies

Utilized in high-power switch-mode power supplies for efficient voltage regulation.

Motor Control

Integrated into motor drive circuits for controlling high-current motors in industrial and automotive applications.

Inverters

Used in the construction of inverters for converting DC power to AC power in renewable energy systems and industrial machinery.

Detailed and Complete Alternative Models

  • IRF840
  • FDP8870
  • STP80NF03L

In conclusion, the IPB80N06S407ATMA1 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power management applications across various industries.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPB80N06S407ATMA1 en soluciones técnicas

  1. What is the maximum drain-source voltage of IPB80N06S407ATMA1?

    • The maximum drain-source voltage of IPB80N06S407ATMA1 is 60V.

  2. What is the continuous drain current rating of IPB80N06S407ATMA1?

    • The continuous drain current rating of IPB80N06S407ATMA1 is 80A.

  3. What is the on-state resistance (RDS(on)) of IPB80N06S407ATMA1?

    • The on-state resistance (RDS(on)) of IPB80N06S407ATMA1 is typically 8.7mΩ at VGS = 10V.

  4. What is the gate threshold voltage of IPB80N06S407ATMA1?

    • The gate threshold voltage of IPB80N06S407ATMA1 is typically 2.5V.

  5. What is the power dissipation of IPB80N06S407ATMA1?

    • The power dissipation of IPB80N06S407ATMA1 is 300W.

  6. What are the typical applications for IPB80N06S407ATMA1?

    • IPB80N06S407ATMA1 is commonly used in high-current switching applications such as motor control, power supplies, and inverters.

  7. Is IPB80N06S407ATMA1 suitable for automotive applications?

    • Yes, IPB80N06S407ATMA1 is designed for automotive applications and meets the necessary standards and requirements.

  8. What is the operating temperature range of IPB80N06S407ATMA1?

    • The operating temperature range of IPB80N06S407ATMA1 is -55°C to 175°C.

  9. Does IPB80N06S407ATMA1 have built-in protection features?

    • IPB80N06S407ATMA1 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.

  10. Can IPB80N06S407ATMA1 be used in parallel to increase current handling capability?

    • Yes, IPB80N06S407ATMA1 can be used in parallel to increase the overall current handling capability in a circuit. However, proper attention should be given to thermal management and current sharing among the devices.