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IPD200N15N3GATMA1
Product Overview
Category
The IPD200N15N3GATMA1 belongs to the category of power MOSFETs.
Use
It is used as a high-voltage, fast-switching N-channel enhancement-mode power MOSFET.
Characteristics
- High voltage capability
- Low gate charge
- Fast switching speed
- Low on-resistance
Package
The IPD200N15N3GATMA1 comes in a TO-252 package.
Essence
This power MOSFET is essential for efficient power management and control in various electronic applications.
Packaging/Quantity
It is typically packaged in reels with a specific quantity per reel, such as 2500 pieces per reel.
Specifications
- Drain-Source Voltage (VDS): 150V
- Continuous Drain Current (ID): 200A
- On-Resistance (RDS(on)): 3mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 160nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPD200N15N3GATMA1 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in high-power applications.
- Low gate charge enables fast switching, reducing power loss.
- Low on-resistance minimizes conduction losses.
Advantages and Disadvantages
Advantages
- High voltage capability suitable for demanding applications.
- Fast switching speed for efficient power control.
- Low on-resistance reduces power dissipation.
Disadvantages
- May require careful handling due to high voltage ratings.
- Sensitive to overvoltage conditions.
Working Principles
The IPD200N15N3GATMA1 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPD200N15N3GATMA1 is commonly used in: - Switched-mode power supplies - Motor control systems - Electric vehicle powertrains - Renewable energy systems
Detailed and Complete Alternative Models
Some alternative models to the IPD200N15N3GATMA1 include: - IPD200N15N3G - IPD200N15N3 - IPD200N15N3G
In conclusion, the IPD200N15N3GATMA1 is a high-voltage power MOSFET with fast-switching characteristics, making it suitable for various power management applications across different industries.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPD200N15N3GATMA1 en soluciones técnicas
What is the maximum drain-source voltage of IPD200N15N3GATMA1?
- The maximum drain-source voltage of IPD200N15N3GATMA1 is 150V.
What is the continuous drain current rating of IPD200N15N3GATMA1?
- The continuous drain current rating of IPD200N15N3GATMA1 is 200A.
What is the on-state resistance (RDS(on)) of IPD200N15N3GATMA1?
- The on-state resistance (RDS(on)) of IPD200N15N3GATMA1 is typically 1.5mΩ.
What is the gate threshold voltage of IPD200N15N3GATMA1?
- The gate threshold voltage of IPD200N15N3GATMA1 is typically 2.5V.
What are the typical applications for IPD200N15N3GATMA1?
- IPD200N15N3GATMA1 is commonly used in high-current, high-frequency switching applications such as motor drives, power supplies, and inverters.
What is the operating temperature range of IPD200N15N3GATMA1?
- The operating temperature range of IPD200N15N3GATMA1 is typically -55°C to 175°C.
Does IPD200N15N3GATMA1 have built-in protection features?
- Yes, IPD200N15N3GATMA1 includes built-in overcurrent protection and thermal shutdown features.
What is the package type of IPD200N15N3GATMA1?
- IPD200N15N3GATMA1 is available in a TO-252-3 package.
Is IPD200N15N3GATMA1 suitable for automotive applications?
- Yes, IPD200N15N3GATMA1 is designed for automotive applications and meets AEC-Q101 standards.
What are the key advantages of using IPD200N15N3GATMA1 in technical solutions?
- The key advantages of IPD200N15N3GATMA1 include its high current handling capability, low on-state resistance, and robust protection features, making it ideal for demanding power electronics applications.