Consulte las especificaciones para obtener detalles del producto.
IPD60R600E6
Introduction
The IPD60R600E6 is a power MOSFET belonging to the category of electronic components used in power management applications. This device offers unique characteristics and features that make it suitable for various applications.
Basic Information Overview
- Category: Power MOSFET
- Use: Power management applications
- Characteristics: High efficiency, low on-resistance, fast switching speed
- Package: TO-252-3 (DPAK)
- Essence: Efficient power control and management
- Packaging/Quantity: Typically available in reels of 2500 units
Specifications
- Voltage Rating: 600V
- Current Rating: 24A
- On-Resistance: 0.6Ω
- Gate Charge: 22nC
- Operating Temperature Range: -55°C to 150°C
- Datasheet: IPD60R600E6 Datasheet
Detailed Pin Configuration
The IPD60R600E6 follows the standard pin configuration for a TO-252-3 package: 1. Source (S) 2. Gate (G) 3. Drain (D)
Functional Features
- High Efficiency: The low on-resistance of the MOSFET contributes to high efficiency in power management systems.
- Fast Switching Speed: Enables rapid switching between on and off states, reducing power loss and improving overall system performance.
Advantages and Disadvantages
Advantages
- High efficiency
- Low on-resistance
- Fast switching speed
Disadvantages
- Sensitive to voltage spikes
- Requires careful consideration of gate drive circuitry
Working Principles
The IPD60R600E6 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device. When a sufficient voltage is applied to the gate terminal, the MOSFET allows current to flow between the source and drain terminals.
Detailed Application Field Plans
The IPD60R600E6 finds extensive use in various power management applications, including but not limited to: - Switched-mode power supplies - Motor control - LED lighting - Solar inverters - Battery management systems
Detailed and Complete Alternative Models
- IPD60R600E6: Original model with specified specifications
- IPD60R600P6: Similar model with enhanced power dissipation capabilities
- IPD60R600C6: Compact version with reduced footprint for space-constrained applications
In conclusion, the IPD60R600E6 power MOSFET offers high efficiency, fast switching speed, and reliable performance, making it a versatile choice for power management applications across various industries.
[Word Count: 394]
Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPD60R600E6 en soluciones técnicas
What is the maximum drain current of IPD60R600E6?
- The maximum drain current of IPD60R600E6 is 24A.
What is the typical on-state resistance of IPD60R600E6?
- The typical on-state resistance of IPD60R600E6 is 0.06 ohms.
What is the maximum power dissipation of IPD60R600E6?
- The maximum power dissipation of IPD60R600E6 is 300W.
What is the gate-source voltage of IPD60R600E6?
- The gate-source voltage of IPD60R600E6 is ±20V.
What are the typical applications for IPD60R600E6?
- IPD60R600E6 is commonly used in motor control, power supplies, and lighting applications.
What is the operating temperature range of IPD60R600E6?
- The operating temperature range of IPD60R600E6 is -55°C to 150°C.
Does IPD60R600E6 have built-in protection features?
- Yes, IPD60R600E6 has built-in overcurrent protection and thermal shutdown features.
What is the input capacitance of IPD60R600E6?
- The input capacitance of IPD60R600E6 is typically 2700pF.
Can IPD60R600E6 be used in high-frequency switching applications?
- Yes, IPD60R600E6 is suitable for high-frequency switching due to its low on-state resistance.
Is IPD60R600E6 RoHS compliant?
- Yes, IPD60R600E6 is RoHS compliant, making it suitable for environmentally friendly designs.