Infineon Technologies
La imagen puede ser una representación.
Consulte las especificaciones para obtener detalles del producto.
IPP13N03LB G
Ver Detalle Hojas de datos

IPP13N03LB G

Product Overview

Category

The IPP13N03LB G belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification applications.

Characteristics

  • Low on-resistance
  • High current capability
  • Fast switching speed
  • Low gate drive power
  • Enhanced ruggedness

Package

The IPP13N03LB G is typically available in a TO-220 package.

Essence

This MOSFET is essential for efficient power management in various electronic devices and systems.

Packaging/Quantity

It is usually packaged individually and sold in quantities suitable for production or prototyping needs.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 50A
  • On-Resistance (RDS(on)): 13mΩ
  • Power Dissipation (PD): 110W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPP13N03LB G typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low on-resistance for minimal power loss
  • High current handling capability
  • Fast switching speed for efficient operation
  • Enhanced ruggedness for reliability in harsh conditions

Advantages

  • Efficient power management
  • Suitable for high-current applications
  • Reliable performance
  • Versatile use in electronic circuits

Disadvantages

  • May require careful handling due to sensitivity to static electricity
  • Higher cost compared to standard transistors

Working Principles

The IPP13N03LB G operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPP13N03LB G is widely used in various applications, including: - Switching power supplies - Motor control - LED lighting - Audio amplifiers - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the IPP13N03LB G include: - IRF3205 - FDP8870 - STP55NF06L

In conclusion, the IPP13N03LB G is a versatile power MOSFET with excellent characteristics, making it suitable for a wide range of electronic applications.

[Word Count: 314]

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPP13N03LB G en soluciones técnicas

  1. What is the maximum drain-source voltage of IPP13N03LB G?

    • The maximum drain-source voltage of IPP13N03LB G is 30V.

  2. What is the continuous drain current rating of IPP13N03LB G?

    • The continuous drain current rating of IPP13N03LB G is 50A.

  3. What is the on-state resistance (RDS(on)) of IPP13N03LB G?

    • The on-state resistance (RDS(on)) of IPP13N03LB G is typically 8.5mΩ at VGS = 10V.

  4. What is the gate threshold voltage of IPP13N03LB G?

    • The gate threshold voltage of IPP13N03LB G is typically 2.5V.

  5. Is IPP13N03LB G suitable for use in automotive applications?

    • Yes, IPP13N03LB G is suitable for use in automotive applications.

  6. What is the operating temperature range of IPP13N03LB G?

    • The operating temperature range of IPP13N03LB G is -55°C to 175°C.

  7. Does IPP13N03LB G have built-in ESD protection?

    • Yes, IPP13N03LB G has built-in ESD protection.

  8. What is the typical input capacitance of IPP13N03LB G?

    • The typical input capacitance of IPP13N03LB G is 3700pF.

  9. Can IPP13N03LB G be used in power management applications?

    • Yes, IPP13N03LB G can be used in power management applications.

  10. What package type is IPP13N03LB G available in?

    • IPP13N03LB G is available in a TO-220 package.