Infineon Technologies
La imagen puede ser una representación.
Consulte las especificaciones para obtener detalles del producto.
IRF6614TR1PBF
Ver Detalle Hojas de datos

IRF6614TR1PBF

Product Overview

Category

The IRF6614TR1PBF belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and power switching.

Characteristics

  • High current-carrying capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive power

Package

The IRF6614TR1PBF is typically available in a TO-263 package.

Essence

This MOSFET is essential for efficient power control and management in various electronic systems.

Packaging/Quantity

It is usually supplied in reels with a specific quantity per reel, depending on the manufacturer's specifications.

Specifications

  • Drain-Source Voltage (VDS): 75V
  • Continuous Drain Current (ID): 39A
  • RDS(ON) (Max) @ VGS = 10V: 8.5mΩ
  • Gate-Source Voltage (VGS) ±20V
  • Total Power Dissipation (PD): 200W

Detailed Pin Configuration

The IRF6614TR1PBF typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low conduction losses
  • Enhanced thermal performance
  • Compatibility with various driving circuits
  • High efficiency in power management applications

Advantages

  • High current-handling capacity
  • Reduced power dissipation
  • Improved system efficiency
  • Suitable for high-frequency switching applications

Disadvantages

  • Sensitivity to static electricity
  • Potential for thermal runaway if not properly managed
  • Gate capacitance may affect high-frequency performance

Working Principles

The IRF6614TR1PBF operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can efficiently regulate power flow in electronic circuits.

Detailed Application Field Plans

The IRF6614TR1PBF finds extensive use in the following application fields: - Switched-mode power supplies - Motor control systems - DC-DC converters - Battery management systems - Solar inverters

Detailed and Complete Alternative Models

Some alternative models to the IRF6614TR1PBF include: - IRF6614 - IRF6614PbF - IRF6614TRPbF - IRF6614TRPbF-7

In conclusion, the IRF6614TR1PBF power MOSFET offers high-performance characteristics suitable for various power management applications, despite its potential drawbacks. Its working principles and detailed application field plans demonstrate its versatility and importance in modern electronic systems.

[Word Count: 398]

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IRF6614TR1PBF en soluciones técnicas

  1. What is the maximum drain-source voltage of IRF6614TR1PBF?

    • The maximum drain-source voltage of IRF6614TR1PBF is 100V.

  2. What is the continuous drain current rating of IRF6614TR1PBF?

    • The continuous drain current rating of IRF6614TR1PBF is 14A.

  3. What is the on-state resistance (RDS(on)) of IRF6614TR1PBF?

    • The on-state resistance (RDS(on)) of IRF6614TR1PBF is typically 0.028 ohms.

  4. What is the gate threshold voltage of IRF6614TR1PBF?

    • The gate threshold voltage of IRF6614TR1PBF is typically 2V.

  5. Is IRF6614TR1PBF suitable for use in automotive applications?

    • Yes, IRF6614TR1PBF is suitable for use in automotive applications.

  6. Can IRF6614TR1PBF be used in switching power supplies?

    • Yes, IRF6614TR1PBF can be used in switching power supplies.

  7. What is the operating temperature range of IRF6614TR1PBF?

    • The operating temperature range of IRF6614TR1PBF is -55°C to 150°C.

  8. Does IRF6614TR1PBF have built-in ESD protection?

    • No, IRF6614TR1PBF does not have built-in ESD protection.

  9. What package type is IRF6614TR1PBF available in?

    • IRF6614TR1PBF is available in a D2PAK package.

  10. Is IRF6614TR1PBF RoHS compliant?

    • Yes, IRF6614TR1PBF is RoHS compliant.