IRF7807PBF
Product Category: Power MOSFET
Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplification in power electronics applications - Characteristics: High voltage, high current capability, low on-resistance - Package: TO-220AB - Essence: Efficient power management and control - Packaging/Quantity: Typically sold in reels of 1000 units
Specifications: - Voltage Rating: 30V - Continuous Drain Current (ID): 130A - RDS(ON) (at VGS = 10V): 4.5mΩ - Gate Threshold Voltage (VGS(th)): 2V to 4V - Total Gate Charge (Qg): 60nC - Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration: - Pin 1 (G): Gate - Pin 2 (D): Drain - Pin 3 (S): Source
Functional Features: - Low on-resistance for minimal power dissipation - Fast switching speed for efficient power control - High current handling capability for robust performance
Advantages: - High efficiency in power management - Suitable for high-current applications - Robust construction for reliable operation
Disadvantages: - Limited voltage rating compared to some alternatives - Higher gate threshold voltage may require higher drive voltage
Working Principles: The IRF7807PBF operates based on the principles of field-effect transistors, utilizing the electric field at the gate to control the flow of current between the drain and source terminals.
Detailed Application Field Plans: - Motor control systems - Power supplies - DC-DC converters - Inverters
Detailed and Complete Alternative Models: - IRF7832PBF - IRF7855PBF - IRF7862PBF
This comprehensive range of power MOSFETs offers varying specifications to suit different application requirements.
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