IRF9910PBF

Product Category: Power MOSFET

Basic Information Overview: - Category: Power semiconductor - Use: Switching applications in power supplies, motor control, and other high current circuits - Characteristics: High voltage capability, low on-resistance, fast switching speed - Package: TO-220AB - Essence: Efficient power management - Packaging/Quantity: Available in reels of 1000 units

Specifications: - Voltage Rating: 100V - Continuous Drain Current (ID): 30A - RDS(ON) (at VGS = 10V): 23mΩ - Gate Threshold Voltage (VGS(th)): 2-4V - Total Gate Charge (Qg): 40nC - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration: - Pin 1 (G): Gate - Pin 2 (D): Drain - Pin 3 (S): Source

Functional Features: - Fast switching speed for improved efficiency - Low on-resistance for reduced power dissipation - High voltage capability for versatile applications

Advantages: - Suitable for high current applications - Enhanced power management capabilities - Reliable and durable design

Disadvantages: - Higher cost compared to some alternative models - May require additional heat sinking in high-power applications

Working Principles: The IRF9910PBF operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a suitable voltage is applied to the gate terminal, the device allows or blocks the flow of current between the drain and source terminals.

Detailed Application Field Plans: - Power supplies - Motor control systems - High current circuits - DC-DC converters - Inverters

Detailed and Complete Alternative Models: - IRF4905PbF - IRF1405PbF - IRF3205PbF - IRF540PbF

This comprehensive entry provides an in-depth understanding of the IRF9910PBF, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

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