Infineon Technologies
La imagen puede ser una representación.
Consulte las especificaciones para obtener detalles del producto.
IRF9953PBF
Ver Detalle Hojas de datos

IRF9953PBF

Product Overview

Category

The IRF9953PBF belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed

Package

The IRF9953PBF is typically available in a TO-220AB package.

Essence

This MOSFET is essential for controlling high-power loads in various electronic devices and systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on supplier and customer requirements.

Specifications

  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 12A
  • On-Resistance (RDS(on)): 0.115Ω
  • Power Dissipation (PD): 2.5W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IRF9953PBF has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power loss and heat generation.
  • Fast switching speed enables efficient control of electronic circuits.

Advantages

  • Suitable for high-power applications
  • Low on-resistance for minimal power loss
  • Wide operating temperature range

Disadvantages

  • May require additional circuitry for driving the gate due to its high gate-source voltage rating.

Working Principles

The IRF9953PBF operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IRF9953PBF is widely used in: - Power supplies - Motor control - LED lighting - Audio amplifiers - Switching regulators

Detailed and Complete Alternative Models

Some alternative models to the IRF9953PBF include: - IRF9540N - IRF840 - IRF3205

In conclusion, the IRF9953PBF is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of electronic applications.

[Word count: 305]

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IRF9953PBF en soluciones técnicas

  1. What is the maximum drain-source voltage of IRF9953PBF?

    • The maximum drain-source voltage of IRF9953PBF is 30V.

  2. What is the continuous drain current of IRF9953PBF?

    • The continuous drain current of IRF9953PBF is 74A.

  3. What is the on-state resistance (RDS(on)) of IRF9953PBF?

    • The on-state resistance (RDS(on)) of IRF9953PBF is typically 1.8mΩ.

  4. Can IRF9953PBF be used in automotive applications?

    • Yes, IRF9953PBF is suitable for use in automotive applications.

  5. What is the operating temperature range of IRF9953PBF?

    • The operating temperature range of IRF9953PBF is -55°C to 175°C.

  6. Is IRF9953PBF RoHS compliant?

    • Yes, IRF9953PBF is RoHS compliant.

  7. What are the typical applications for IRF9953PBF?

    • Typical applications for IRF9953PBF include power supplies, motor control, and automotive systems.

  8. Does IRF9953PBF require a heat sink for high-power applications?

    • Yes, a heat sink may be required for high-power applications to ensure proper thermal management.

  9. What is the gate-source voltage (VGS) for IRF9953PBF?

    • The gate-source voltage (VGS) for IRF9953PBF is ±20V.

  10. Is IRF9953PBF suitable for use in switching applications?

    • Yes, IRF9953PBF is well-suited for use in switching applications due to its low on-state resistance and high drain current capability.