IS42RM16800G-75BLI

Product Overview

Category: Integrated Circuit (IC)

Use: Memory module for electronic devices

Characteristics: - High-speed and high-density memory - Low power consumption - Compact package size - Reliable performance

Package: Ball Grid Array (BGA)

Essence: The IS42RM16800G-75BLI is a memory module designed to provide high-speed and high-density storage for electronic devices. It offers reliable performance with low power consumption in a compact BGA package.

Packaging/Quantity: The IS42RM16800G-75BLI is typically packaged in trays or reels, with a quantity of 1000 units per reel.

Specifications

• Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
• Memory Size: 16 gigabits (2 gigabytes)
• Organization: 2 ranks x 8 banks x 16 bits
• Data Rate: 750 megatransfers per second (MT/s)
• Operating Voltage: 1.35 volts
• Operating Temperature Range: -40°C to +85°C
• Clock Frequency: 375 MHz
• Interface: Double Data Rate 3 (DDR3)
• Pin Count: 96 pins

Detailed Pin Configuration

The IS42RM16800G-75BLI has a total of 96 pins, which are assigned specific functions as follows:

• Pins 1-12: Address Inputs (A0-A11)
• Pins 13-24: Address Inputs (BA0-BA2)
• Pins 25-30: Bank Select Inputs (BA3-BA5)
• Pins 31-36: Chip Enable Inputs (CE0#, CE1#)
• Pins 37-42: Clock Inputs (CK, CK#)
• Pins 43-48: Data Inputs/Outputs (DQ0-DQ7)
• Pins 49-54: Data Inputs/Outputs (DQ8-DQ15)
• Pins 55-60: Data Inputs/Outputs (DQ16-DQ23)
• Pins 61-66: Data Inputs/Outputs (DQ24-DQ31)
• Pins 67-72: Data Mask Inputs/Outputs (DM0-DM7)
• Pins 73-78: Data Strobe Inputs/Outputs (DQS0-DQS1)
• Pins 79-84: Data Strobe Inputs/Outputs (DQS2-DQS3)
• Pins 85-90: Data Strobe Inputs/Outputs (DQS4-DQS5)
• Pins 91-96: Power and Ground

Functional Features

• High-speed data transfer with a data rate of 750 MT/s
• Low power consumption for energy-efficient operation
• Reliable performance in various operating conditions
• Support for advanced memory management features
• Compatibility with DDR3 interface standards

Advantages and Disadvantages

Advantages: - High-speed and high-density memory capacity - Low power consumption for improved energy efficiency - Compact package size for space-constrained designs - Reliable performance in different operating conditions

Disadvantages: - Limited memory capacity compared to higher-end modules - Higher cost per gigabit compared to lower-density options - Requires compatible hardware and software support for optimal performance

Working Principles

The IS42RM16800G-75BLI operates based on the principles of Synchronous Dynamic Random Access Memory (SDRAM). It stores digital data in a synchronous manner, allowing for high-speed access and retrieval. The memory module communicates with the host device through a DDR3 interface, enabling efficient data transfer between the memory and the device.

Detailed Application Field Plans

The IS42RM16800G-75BLI is commonly used in various electronic devices that require high-speed and high-density memory, such as: - Personal computers - Laptops and notebooks - Servers and data centers - Networking equipment - Gaming consoles - Embedded systems

Detailed and Complete Alternative Models

1. IS42S16400F-7TLI: 16Mb SDRAM, 4M x 4-bit organization, 143 MHz clock frequency.
2. IS42S16800E-7TLI: 128Mb SDRAM, 8M x 16-bit organization, 143 MHz clock frequency.
3. IS42S16160D-7TLI: 256Mb SDRAM, 16M x 16-bit organization, 143 MHz clock frequency.
4. IS42S16320D-7TLI: 512Mb SDRAM, 32M x 16-bit organization, 143 MHz clock frequency.
5. IS42S16400J-7TLI: 1Gb SDRAM, 64M x