IS42S16160D-75EBLI-TR

Product Overview

Category

IS42S16160D-75EBLI-TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, laptops, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size

Package

IS42S16160D-75EBLI-TR is available in a small outline dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S16160D-75EBLI-TR lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

IS42S16160D-75EBLI-TR is typically packaged in trays or reels, with each tray/reel containing a specific quantity of modules. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 16 Megabytes (MB)
• Organization: 1M words x 16 bits
• Operating Voltage: 3.3 Volts (V)
• Speed Grade: 75E
• Interface: Parallel
• Clock Frequency: 133 MHz
• Access Time: 7.5 ns
• Refresh Rate: 8K cycles/32 ms

Detailed Pin Configuration

The pin configuration of IS42S16160D-75EBLI-TR is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VDD | Power Supply (3.3V) | | 2 | DQ0 | Data Input/Output Bit 0 | | 3 | DQ1 | Data Input/Output Bit 1 | | ... | ... | ... | | 50 | VSS | Ground | | 51 | NC | No Connection | | 52 | VDDQ | Power Supply for I/O Buffers (3.3V) |

Note: This is a simplified pin configuration table. The actual product may have additional pins and functionalities.

Functional Features

• High-speed data transfer
• Burst mode operation
• Auto precharge and power-down modes
• On-die termination (ODT) for improved signal integrity
• Internal pipelined architecture for efficient data access

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Large storage capacity
• Low power consumption
• Compact form factor
• Suitable for various electronic devices

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability in terms of capacity

Working Principles

IS42S16160D-75EBLI-TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It uses a clock signal to synchronize data transfers between the memory module and the device it is connected to. The data is stored in capacitors within the memory cells, which need to be periodically refreshed to maintain their contents.

Detailed Application Field Plans

IS42S16160D-75EBLI-TR finds applications in various electronic devices that require high-speed data storage and retrieval. Some of the potential application fields include:

1. Personal Computers (PCs)
2. Laptops and Notebooks
3. Servers
4. Gaming Consoles
5. Mobile Phones and Tablets
6. Networking Equipment

Detailed and Complete Alternative Models

Some alternative models to IS42S16160D-75EBLI-TR that offer similar functionality and specifications include:

1. MT48LC16M16A2P-75: 16 Megabytes (MB) SDRAM, 133 MHz clock frequency, 7.5 ns access time.
2. K4S161622D-TC60: 16 Megabytes (MB) SDRAM, 133 MHz clock frequency, 6 ns access time.
3. HYB39S16160T-7: 16 Megabytes (MB) SDRAM, 133 MHz clock frequency, 7 ns access time.

These alternative models can be considered based on specific requirements and availability.

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