IS42S32160B-7BLI

Product Overview

Category

IS42S32160B-7BLI belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, laptops, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Low power consumption
• Compact package size
• Wide operating temperature range
• Reliable performance

Package

IS42S32160B-7BLI is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of IS42S32160B-7BLI lies in its ability to provide fast and efficient data storage and retrieval, making it an essential component in modern electronic devices.

Packaging/Quantity

IS42S32160B-7BLI is typically packaged individually and sold in quantities suitable for various applications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 512 Megabytes (MB)
• Organization: 32 Megabytes x 16 bits
• Speed: 7 nanoseconds (ns)
• Voltage: 3.3 Volts (V)
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S32160B-7BLI is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /CKE
42. /CLK

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings
• Support for multiple banks and chip selects

Advantages and Disadvantages

Advantages

• Fast data transfer rate enhances overall system performance
• Low power consumption prolongs battery life in portable devices
• Compact package size allows for easy integration into various electronic devices
• Wide operating temperature range ensures reliable operation in different environments

Disadvantages

• Relatively small memory capacity compared to higher-end modules
• Limited compatibility with older systems that do not support SDRAM technology

Working Principles

IS42S32160B-7BLI operates based on the principles of synchronous dynamic random access memory. It stores data in a matrix of capacitors, which are organized into rows and columns. The memory controller sends commands to access specific rows and columns, allowing for fast read and write operations.

Detailed Application Field Plans

IS42S32160B-7BLI is widely used in various electronic devices, including but not limited to: - Personal computers - Laptops - Smartphones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS42S32160B-7BLI include: - MT48LC32M16A2P-75: Micron Technology Inc. - K4S561632H-UC75: Samsung Electronics Co., Ltd. - HYB39S512800BT-7: Infineon Technologies AG - M5M5256DFP-70LL: Renesas Electronics Corporation

These alternative models provide comparable specifications and can be used as substitutes depending on the specific requirements of the application.

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