IS42S32160F-6BL-TR

Product Overview

Category

IS42S32160F-6BL-TR belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, laptops, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Low power consumption
• Compact size
• Wide operating temperature range
• Reliable performance

Package

IS42S32160F-6BL-TR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of IS42S32160F-6BL-TR lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

IS42S32160F-6BL-TR is typically packaged in trays or reels, with each tray/reel containing a specific quantity of modules. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 512 Megabytes (MB)
• Organization: 32 Megabytes x 16 bits
• Speed: 6 nanoseconds (ns)
• Voltage Supply: 3.3 Volts (V)
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S32160F-6BL-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /CKE
42. /CLK
43. /DQM0
44. /DQM1
45. VSS

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings
• Support for multiple banks and chip selects

Advantages and Disadvantages

Advantages

• Fast data transfer rate enhances overall system performance
• Low power consumption prolongs battery life in portable devices
• Compact size allows for easy integration into various electronic devices
• Wide operating temperature range ensures reliable operation in different environments

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited capacity compared to other storage options like solid-state drives (SSDs)
• Susceptible to data loss in case of power failure without proper backup mechanisms

Working Principles

IS42S32160F-6BL-TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed by sending row and column addresses to the memory module, which activates the corresponding cells and retrieves the stored data.

Detailed Application Field Plans

IS42S32160F-6BL-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Workstations - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to IS42S32160F-6BL-TR include: - MT48LC32M16A2P-75: Micron Technology Inc. - K4S561632H-UC75: Samsung Electronics Co., Ltd. - HYB39S256160FE-7: Infineon Technologies AG - M12L64164A-7T: Macronix International Co., Ltd. - AS4C32M16SB-7TCN: Alliance Memory Inc.

These alternative models offer similar specifications and functionalities, providing options for different design requirements