IS42S32800J-75ETLI

Product Overview

Category

IS42S32800J-75ETLI belongs to the category of dynamic random access memory (DRAM) modules.

Use

It is primarily used as a memory component in various electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• High-speed data transfer capabilities
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS42S32800J-75ETLI is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of IS42S32800J-75ETLI lies in its ability to provide fast and efficient data storage and retrieval for electronic devices, enhancing their overall performance.

Packaging/Quantity

IS42S32800J-75ETLI is typically packaged individually or in bulk quantities, depending on the manufacturer's specifications.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 256 Megabytes (MB)
• Organization: 32 Megabytes x 8 bits
• Speed: 750 MHz
• Voltage: 1.5 Volts
• Interface: 144-pin SODIMM
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S32800J-75ETLI is as follows:

Pin Number | Pin Name | Function -----------|----------|--------- 1 | VDD | Power Supply 2 | DQ0 | Data Input/Output 3 | DQ1 | Data Input/Output 4 | DQ2 | Data Input/Output 5 | DQ3 | Data Input/Output 6 | DQ4 | Data Input/Output 7 | DQ5 | Data Input/Output 8 | DQ6 | Data Input/Output 9 | DQ7 | Data Input/Output 10 | VSS | Ground 11 | NC | No Connection 12 | A0 | Address Input 13 | A1 | Address Input 14 | A2 | Address Input 15 | A3 | Address Input 16 | A4 | Address Input 17 | A5 | Address Input 18 | A6 | Address Input 19 | A7 | Address Input 20 | A8 | Address Input 21 | A9 | Address Input 22 | A10 | Address Input 23 | A11 | Address Input 24 | A12 | Address Input 25 | A13 | Address Input 26 | A14 | Address Input 27 | A15 | Address Input 28 | A16 | Address Input 29 | A17 | Address Input 30 | A18 | Address Input 31 | WE | Write Enable 32 | CAS | Column Address Strobe 33 | RAS | Row Address Strobe 34 | CKE | Clock Enable 35 | CS | Chip Select 36 | DM | Data Mask 37 | DQS | Data Strobe 38 | DQSN | Data Strobe Inverted 39 | VDDQ | Power Supply for I/O Buffers 40 | VREF | Reference Voltage

Functional Features

• High-speed data transfer rate for efficient data processing.
• Low power consumption, ensuring energy efficiency.
• Reliable performance, providing stable and consistent memory operations.
• Compact form factor, suitable for space-constrained devices.
• Compatibility with various electronic devices, enhancing versatility.

Advantages and Disadvantages

Advantages

• Fast data transfer rate improves overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Compact package size allows for easy integration into small form factor devices.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Higher cost per unit of storage compared to alternative memory options.
• Requires proper handling and installation to prevent damage.

Working Principles

IS42S32800J-75ETLI operates based on the principles of dynamic random access memory (DRAM). It stores data in capacitors within an integrated circuit, where each capacitor represents a single bit of information. To read or write data, the memory controller sends appropriate signals to the specific address and activates the corresponding row and column lines. This allows the charge stored in the capacitors to be sensed or modified, enabling data retrieval or storage.

Detailed Application Field Plans