IS45S32400F-7TLA2

Product Overview

Category

IS45S32400F-7TLA2 belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact size

Package

IS45S32400F-7TLA2 is available in a small form factor package, which makes it suitable for integration into various electronic devices.

Essence

The essence of IS45S32400F-7TLA2 lies in its ability to store and retrieve data quickly and efficiently, enhancing the overall performance of electronic devices.

Packaging/Quantity

IS45S32400F-7TLA2 is typically packaged in trays or reels, with each package containing a specific quantity of memory devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 4 Gigabits (512 Megabytes)
• Organization: 32M words x 16 bits
• Operating Voltage: 1.7V - 1.95V
• Clock Frequency: Up to 166 MHz
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS45S32400F-7TLA2 is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. WE#
20. CAS#
21. RAS#
22. CKE
23. CS#
24. BA0
25. BA1
26. A0
27. A1
28. A2
29. A3
30. A4
31. A5
32. A6
33. A7
34. A8
35. A9
36. A10
37. A11
38. A12
39. A13
40. A14
41. A15
42. A16
43. A17
44. A18
45. A19
46. A20
47. A21
48. A22
49. A23
50. VDDQ
51. VSSQ

Functional Features

• Burst mode operation for high-speed data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) to improve signal integrity
• Programmable CAS latency for flexible performance optimization
• Precharge power-down and active power-down modes for further power reduction

Advantages and Disadvantages

Advantages

• High-speed operation enhances overall system performance
• Low power consumption prolongs battery life in portable devices
• Large storage capacity allows for the storage of extensive data
• Compact size enables integration into space-constrained devices

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance compared to non-volatile memory types
• Susceptible to data loss in case of power failure without proper backup measures

Working Principles

IS45S32400F-7TLA2 operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The stored data is accessed and manipulated by sending commands and addresses through the device's interface.

Detailed Application Field Plans

IS45S32400F-7TLA2 finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models to IS45S32400F-7TLA2 include: - MT47H64M16HR-25E: 4 Gigabit SDRAM, 32M words x 16 bits, parallel interface. - K4B2G1646Q-BCK0: 4 Gigabit SDRAM, 32M words x 16 bits, parallel interface. - AS4C256M16D3L-12BCN: 4 Gigabit SDRAM, 32M words x 16 bits, parallel interface.

These alternative models offer similar specifications and functionality,