IS61VF51236A-7.5B3-TR

Product Overview

Category

IS61VF51236A-7.5B3-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Reliable data retention
• Compact package size

Package

IS61VF51236A-7.5B3-TR is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS61VF51236A-7.5B3-TR is typically packaged in reels or trays and is available in large quantities for mass production.

Specifications

• Memory Type: Flash
• Capacity: 512 megabits (64 megabytes)
• Organization: 32M x 16 bits
• Voltage Supply: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A24 - Address inputs
4. DQ0-DQ15 - Data input/output
5. WE# - Write enable
6. CE# - Chip enable
7. OE# - Output enable
8. RP# - Ready/Busy status
9. BYTE# - Byte enable
10. RESET# - Reset pin

Functional Features

• High-speed read and write operations
• Sector erase and byte programming capabilities
• Automatic program and erase algorithms
• Hardware and software protection mechanisms
• Low power consumption in standby mode

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Large storage capacity for various applications
• Low power consumption, suitable for battery-powered devices
• Reliable data retention even in harsh environments

Disadvantages

• Limited endurance (number of erase/write cycles)
• Higher cost compared to traditional non-volatile memory technologies

Working Principles

IS61VF51236A-7.5B3-TR utilizes flash memory technology, which is based on the principle of storing electrical charges in floating gate transistors. These charges represent binary data (0s and 1s) and can be electrically programmed or erased. The memory cells are organized into a matrix, allowing for efficient read and write operations.

Detailed Application Field Plans

IS61VF51236A-7.5B3-TR finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Smartphones and tablets - Automotive electronics - Industrial control systems - Medical devices - Consumer electronics

Detailed and Complete Alternative Models

• IS61VF25632A-10BLI: 256 megabit flash memory with lower access time
• IS61VF102418BLL-10TLI: 1 gigabit flash memory with higher capacity
• IS61LV25616AL-10TLI: 256 kilobit low voltage static RAM (SRAM) alternative
• IS62WV1288BLL-55HLI: 128 kilobit synchronous DRAM (SDRAM) alternative

These alternative models offer different specifications and features to cater to specific application requirements.

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