IS61WV2568EDBLL-10BLI

Product Overview

Category

IS61WV2568EDBLL-10BLI belongs to the category of Static Random Access Memory (SRAM) chips.

Use

This product is primarily used for storing and retrieving digital information in electronic devices.

Characteristics

• High-speed access: The IS61WV2568EDBLL-10BLI offers fast read and write operations, making it suitable for applications requiring quick data access.
• Low power consumption: This SRAM chip is designed to minimize power consumption, making it ideal for battery-powered devices.
• Non-volatile storage: The stored data remains intact even when the power supply is disconnected.
• Wide temperature range: The IS61WV2568EDBLL-10BLI can operate reliably across a wide temperature range, making it suitable for various environments.

Package and Quantity

The IS61WV2568EDBLL-10BLI is available in a Ball Grid Array (BGA) package. The quantity per package may vary depending on the manufacturer's specifications.

Essence

The essence of the IS61WV2568EDBLL-10BLI lies in its ability to provide high-speed, low-power, non-volatile memory storage for electronic devices.

Specifications

• Memory capacity: 256 kilobits (32 kilobytes)
• Operating voltage: 3.3 volts
• Access time: 10 nanoseconds
• Organization: 32K x 8 bits
• Data retention: More than 20 years
• Operating temperature range: -40°C to +85°C

Detailed Pin Configuration

The IS61WV2568EDBLL-10BLI has a total of 44 pins. Here is a detailed pin configuration:

1. A0-A14: Address inputs
2. DQ0-DQ7: Data inputs/outputs
3. WE#: Write enable input
4. OE#: Output enable input
5. CE#: Chip enable input
6. VCC: Power supply
7. GND: Ground

Functional Features

• Random access: The IS61WV2568EDBLL-10BLI allows random access to any memory location, enabling efficient data retrieval.
• High-speed operation: With an access time of 10 nanoseconds, this SRAM chip ensures fast read and write operations.
• Low power consumption: The IS61WV2568EDBLL-10BLI is designed to minimize power consumption, making it suitable for battery-powered devices.
• Non-volatile storage: The stored data remains intact even when the power supply is disconnected, ensuring data integrity.

Advantages and Disadvantages

Advantages

• High-speed access enables quick data retrieval.
• Low power consumption prolongs battery life in portable devices.
• Non-volatile storage ensures data integrity.
• Wide temperature range allows reliable operation in various environments.

Disadvantages

• Limited memory capacity compared to other storage technologies.
• Relatively higher cost per unit compared to other memory options.

Working Principles

The IS61WV2568EDBLL-10BLI operates based on the principles of static random access memory. It uses flip-flops to store each bit of data, which can be accessed randomly by providing the appropriate address. The chip utilizes a combination of transistors and capacitors to retain the stored data even without power.

Detailed Application Field Plans

The IS61WV2568EDBLL-10BLI finds applications in various electronic devices, including but not limited to: - Personal computers - Mobile phones - Networking equipment - Automotive electronics - Industrial control systems

Alternative Models

Here are some alternative models that offer similar functionality to the IS61WV2568EDBLL-10BLI: - IS61WV25616BLL-10BLI - CY62157EV30LL-45ZSXI - AS6C62256-55PCN

These alternative models provide comparable memory capacity, access times, and operating voltages.

In conclusion, the IS61WV2568EDBLL-10BLI is a high-speed, low-power, non-volatile SRAM chip that offers reliable data storage for various electronic devices. Its wide temperature range and random access capabilities make it suitable for diverse applications.