IS61WV51216EDBLL-10TLI-TR

Product Overview

Category

IS61WV51216EDBLL-10TLI-TR belongs to the category of high-speed, low-power CMOS static random access memory (SRAM) chips.

Use

This product is primarily used in electronic devices and systems that require fast and reliable data storage and retrieval. It is commonly found in applications such as computers, smartphones, networking equipment, and automotive electronics.

Characteristics

• High-speed operation: The IS61WV51216EDBLL-10TLI-TR offers fast access times, allowing for quick data read and write operations.
• Low power consumption: This SRAM chip is designed to minimize power usage, making it suitable for battery-powered devices.
• Large storage capacity: With a capacity of 512 kilobits (64 kilobytes), this chip can store a significant amount of data.
• Wide operating voltage range: The IS61WV51216EDBLL-10TLI-TR can operate within a voltage range of 2.7V to 3.6V, providing flexibility in various electronic systems.
• Small form factor: The chip is available in a compact Thin Small Outline Package (TSOP), making it easy to integrate into different circuit designs.

Packaging/Quantity

The IS61WV51216EDBLL-10TLI-TR is typically packaged in reels or trays. Each reel contains a specific quantity of chips, usually around 2500 units, while trays may hold up to 100 units.

Specifications

• Organization: 512K words × 16 bits
• Supply voltage: 2.7V - 3.6V
• Access time: 10 ns
• Standby current: 5 μA (typical)
• Operating temperature range: -40°C to +85°C
• Package type: Thin Small Outline Package (TSOP)

Detailed Pin Configuration

The IS61WV51216EDBLL-10TLI-TR has a total of 48 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. /CE
18. /OE
19. /WE
20. I/O0
21. I/O1
22. I/O2
23. I/O3
24. I/O4
25. I/O5
26. I/O6
27. I/O7
28. Vcc
29. GND
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Note: "NC" denotes "No Connection."

Functional Features

• Random access: The SRAM chip allows for direct and random access to any memory location, enabling efficient data retrieval.
• High-speed operation: With an access time of 10 ns, the IS61WV51216EDBLL-10TLI-TR ensures fast read and write operations.
• Low power consumption: The chip is designed to minimize power usage during standby and active modes, making it suitable for energy-efficient devices.
• Data retention: The SRAM retains data as long as power is supplied, eliminating the need for constant refreshing.

Advantages and Disadvantages

Advantages

• Fast access times enable quick data retrieval.
• Low power consumption prolongs battery life in portable devices.
• Large storage capacity accommodates a significant amount of data.
• Wide operating voltage range provides flexibility in various electronic systems.

Disadvantages

• Volatile memory requires continuous power supply to retain data.
• Relatively higher cost compared to other types of memory.

Working Principles

The IS61WV51216EDBLL-10TLI-TR operates based on the principles of static random access memory (SRAM). It utilizes flip-flops to store each bit of data in a stable state. When an address is provided, the chip accesses the corresponding memory location directly, allowing for fast read and write operations. The stored data remains intact as long as power is supplied to the chip.

Detailed Application Field Plans

The IS61WV51216EDBLL-10TLI-TR finds applications in various electronic devices and systems that