IS61WV5128EDBLL-10BLI-TR

Product Overview

Category

IS61WV5128EDBLL-10BLI-TR belongs to the category of static random-access memory (SRAM) chips.

Use

This product is commonly used in electronic devices and systems that require high-speed read and write operations, such as computers, smartphones, and networking equipment.

Characteristics

• High-speed operation: The IS61WV5128EDBLL-10BLI-TR offers fast access times, allowing for efficient data retrieval and storage.
• Low power consumption: This SRAM chip is designed to minimize power usage, making it suitable for battery-powered devices.
• Small form factor: The compact package size of the IS61WV5128EDBLL-10BLI-TR enables its integration into space-constrained electronic designs.
• Wide temperature range: It can operate reliably across a broad temperature range, making it suitable for various environments.
• High reliability: The chip is built with robust materials and manufacturing processes, ensuring long-term stability and durability.

Package and Quantity

The IS61WV5128EDBLL-10BLI-TR is typically available in a surface-mount package. The exact package type may vary depending on the manufacturer. It is commonly sold in reels or trays containing a specific quantity of chips, usually ranging from hundreds to thousands per package.

Specifications

• Memory Size: 512 kilobits (64 kilobytes)
• Organization: 32,768 words × 16 bits
• Access Time: 10 nanoseconds
• Supply Voltage: 3.3 volts
• Operating Temperature Range: -40°C to +85°C
• Package Type: Ball Grid Array (BGA)
• Pin Count: 48 pins

Detailed Pin Configuration

The IS61WV5128EDBLL-10BLI-TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. /CE
19. /OE
20. WE
21. I/O0
22. I/O1
23. I/O2
24. I/O3
25. I/O4
26. I/O5
27. I/O6
28. I/O7
29. I/O8
30. I/O9
31. I/O10
32. I/O11
33. I/O12
34. I/O13
35. I/O14
36. I/O15
37. GND
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Random access: The IS61WV5128EDBLL-10BLI-TR allows for direct and fast read/write operations to any memory location.
• Non-volatile storage: The data stored in this SRAM chip remains intact even when power is removed, ensuring data persistence.
• Easy integration: The chip can be easily interfaced with microcontrollers and other digital devices using standard communication protocols.

Advantages and Disadvantages

Advantages

• High-speed operation enables efficient data processing.
• Low power consumption prolongs battery life in portable devices.
• Small form factor allows for space-saving integration.
• Wide temperature range ensures reliable performance in various environments.
• High reliability ensures long-term stability and durability.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Volatile nature requires constant power supply to retain data.

Working Principles

The IS61WV5128EDBLL-10BLI-TR is based on static random-access memory technology. It utilizes flip-flops to store each bit of data, allowing for fast access times. The chip operates by applying appropriate voltage levels to the control pins (CE, OE, WE) and address pins (A0-A15), enabling read or write operations to specific memory locations. The data is stored in the internal memory cells and can be accessed randomly without the need for refreshing.

Detailed Application Field Plans

The IS61WV5128EDBLL-10BLI-TR finds applications in various electronic systems that require high-speed data storage and retrieval. Some common application fields include:

1. Computers: Used as cache memory to enhance overall system performance.
2. Smartphones and tablets: