IS66WV1M16DBLL-55BLI-TR

Product Overview

Category

IS66WV1M16DBLL-55BLI-TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Non-volatile memory
• Low power consumption
• Compact size
• Reliable performance

Package

IS66WV1M16DBLL-55BLI-TR is available in a small form factor package, designed to fit into various electronic devices seamlessly.

Essence

The essence of IS66WV1M16DBLL-55BLI-TR lies in its ability to store and retrieve large amounts of data quickly and reliably, making it an essential component in modern electronic devices.

Packaging/Quantity

IS66WV1M16DBLL-55BLI-TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of the product. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 1 Megabit (1M)
• Organization: 16 Megabits x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: -55BLI
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Pin Count: 48 pins

Detailed Pin Configuration

The pin configuration of IS66WV1M16DBLL-55BLI-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /OE
38. /UB
39. /LB
40. VSS
41. VSS
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. VDDQ

Functional Features

• High-speed data transfer
• Random access to stored data
• Low power consumption during standby mode
• Easy integration with various electronic devices
• Error correction capabilities

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Compact size for space-constrained devices
• Low power consumption, enhancing battery life
• Reliable performance and error correction capabilities

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit of storage compared to alternative options

Working Principles

IS66WV1M16DBLL-55BLI-TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in a matrix of capacitors, which are organized into rows and columns. The data is accessed by sending specific commands and addresses to the memory device, allowing for fast and efficient retrieval of stored information.

Detailed Application Field Plans

IS66WV1M16DBLL-55BLI-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

Some alternative models to IS66WV1M16DBLL-55BLI-TR include: - IS66WV1M16DALL-55BLI-TR - IS66WV1M16DCLL-55BLI-TR - IS66WV1M16DBLL-55TLI-TR - IS66WV1M16DBLL-55TLI

These alternative models offer similar functionality and specifications, providing options for different design requirements and compatibility with various electronic systems.

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