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IXFN26N100P
Product Overview
Category
The IXFN26N100P belongs to the category of power MOSFETs.
Use
It is commonly used in high-power applications such as motor control, power supplies, and inverters.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- High reliability
Package
The IXFN26N100P is typically available in a TO-247 package.
Essence
This MOSFET is essential for efficient power management in various electronic systems.
Packaging/Quantity
It is usually sold individually or in reels, with specific quantities depending on the supplier.
Specifications
- Voltage Rating: 1000V
- Current Rating: 26A
- On-Resistance: 0.19Ω
- Gate Charge: 110nC
- Operating Temperature: -55°C to 150°C
Detailed Pin Configuration
The IXFN26N100P has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- Low conduction losses
- High efficiency
- Enhanced thermal performance
- Robustness against voltage spikes
Advantages and Disadvantages
Advantages
- High voltage capability
- Low on-resistance
- Fast switching speed
- Suitable for high-power applications
Disadvantages
- Higher cost compared to lower voltage MOSFETs
- Requires careful handling due to high voltage ratings
Working Principles
The IXFN26N100P operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
Motor Control
The MOSFET can be used in variable frequency drives for precise control of motor speed and torque.
Power Supplies
It is suitable for high-voltage power supply designs, ensuring efficient power conversion.
Inverters
In solar inverters and industrial inverters, the IXFN26N100P enables reliable power switching and conversion.
Detailed and Complete Alternative Models
IXFN24N100
- Voltage Rating: 1000V
- Current Rating: 24A
- On-Resistance: 0.22Ω
IXFN30N100
- Voltage Rating: 1000V
- Current Rating: 30A
- On-Resistance: 0.16Ω
IXFN28N100
- Voltage Rating: 1000V
- Current Rating: 28A
- On-Resistance: 0.18Ω
IXFN27N100
- Voltage Rating: 1000V
- Current Rating: 27A
- On-Resistance: 0.20Ω
IXFN25N100
- Voltage Rating: 1000V
- Current Rating: 25A
- On-Resistance: 0.21Ω
Conclusion
The IXFN26N100P power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for various high-power applications. Its robustness and efficiency make it a valuable component in modern electronic systems.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IXFN26N100P en soluciones técnicas
What is the maximum drain current of IXFN26N100P?
- The maximum drain current of IXFN26N100P is 26A.
What is the maximum voltage rating of IXFN26N100P?
- The maximum voltage rating of IXFN26N100P is 1000V.
What is the on-state resistance of IXFN26N100P?
- The on-state resistance of IXFN26N100P is typically 0.19 ohms.
Can IXFN26N100P be used in high-power applications?
- Yes, IXFN26N100P is suitable for high-power applications due to its high current and voltage ratings.
What type of package does IXFN26N100P come in?
- IXFN26N100P comes in a TO-268 package.
Is IXFN26N100P suitable for motor control applications?
- Yes, IXFN26N100P is commonly used in motor control applications due to its high current handling capability.
Does IXFN26N100P require a heat sink for operation?
- Yes, IXFN26N100P may require a heat sink depending on the specific application and power dissipation requirements.
What are the typical switching frequencies for IXFN26N100P?
- The typical switching frequencies for IXFN26N100P range from a few kHz to several tens of kHz, depending on the application.
Can IXFN26N100P be used in parallel to increase current handling?
- Yes, IXFN26N100P can be used in parallel to increase the overall current handling capability in certain applications.
Are there any recommended driver circuits for IXFN26N100P?
- Various gate driver circuits are available for driving IXFN26N100P, and the choice depends on the specific application requirements.