The IXTD4N80P-3J is a power MOSFET belonging to the category of semiconductor devices. It is widely used in various electronic applications due to its unique characteristics and performance.
The IXTD4N80P-3J features a standard TO-252 pin configuration with three pins: gate (G), drain (D), and source (S).
| Pin Name | Description | |----------|-------------| | G | Gate control input | | D | Drain terminal | | S | Source terminal |
The IXTD4N80P-3J operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to modulate the flow of current between the drain and source terminals.
The IXTD4N80P-3J finds extensive use in the following application fields: 1. Switching power supplies 2. Motor control 3. Lighting systems 4. Renewable energy systems
For applications requiring similar specifications and performance, alternative models to the IXTD4N80P-3J include: - IRFP460 - STW4N150 - FDPF7N60NZ
In conclusion, the IXTD4N80P-3J power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it a versatile choice for various power switching applications.
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What is the IXTD4N80P-3J?
What are the key features of the IXTD4N80P-3J?
In what technical solutions can the IXTD4N80P-3J be used?
What is the maximum voltage and current rating of the IXTD4N80P-3J?
How does the IXTD4N80P-3J compare to other similar MOSFETs in the market?
What are the thermal characteristics of the IXTD4N80P-3J?
Can the IXTD4N80P-3J be used in high-frequency switching applications?
Are there any specific application notes or guidelines for using the IXTD4N80P-3J in technical solutions?
What are the typical failure modes of the IXTD4N80P-3J and how can they be mitigated?
Where can I purchase the IXTD4N80P-3J and are there any authorized distributors?