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IXTT170N10P
Product Overview
Category:
The IXTT170N10P belongs to the category of power MOSFETs.
Use:
It is used as a high-voltage, high-speed switching device in various electronic circuits and applications.
Characteristics:
- High voltage capability
- Low input capacitance
- Fast switching speed
- Low on-resistance
Package:
The IXTT170N10P is typically available in a TO-220 package.
Essence:
This MOSFET is essential for efficient power management and control in electronic systems.
Packaging/Quantity:
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 100V
- Continuous Drain Current (ID): 170A
- On-Resistance (RDS(on)): 10mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Power Dissipation (PD): 300W
Detailed Pin Configuration
The IXTT170N10P typically has three pins: gate, drain, and source. The pin configuration is as follows: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source
Functional Features
- High voltage capability allows for use in high-power applications
- Low input capacitance enables fast switching speeds
- Low on-resistance minimizes power loss and heat generation
Advantages and Disadvantages
Advantages
- High voltage capability suitable for demanding applications
- Fast switching speed for efficient operation
- Low on-resistance reduces power dissipation
Disadvantages
- Higher cost compared to lower-rated MOSFETs
- Requires careful handling due to its high power capabilities
Working Principles
The IXTT170N10P operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.
Detailed Application Field Plans
The IXTT170N10P is commonly used in the following applications: - Switching power supplies - Motor control - Inverters - Welding equipment - High-power audio amplifiers
Detailed and Complete Alternative Models
Some alternative models to the IXTT170N10P include: - IRFP4668PbF - FDPF33N25T - STP75NF75
In conclusion, the IXTT170N10P is a high-voltage power MOSFET with excellent characteristics for various high-power electronic applications, offering efficient switching and power management capabilities.
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What is IXTT170N10P?
- IXTT170N10P is a power MOSFET transistor designed for high power applications.
What is the maximum voltage and current rating of IXTT170N10P?
- The maximum voltage rating is 100V, and the maximum continuous drain current is 170A.
What are the typical applications of IXTT170N10P?
- It is commonly used in applications such as motor control, power supplies, and inverters.
What is the on-state resistance of IXTT170N10P?
- The on-state resistance is typically very low, around 0.007 ohms.
Is IXTT170N10P suitable for high-frequency switching applications?
- Yes, it is designed to handle high-frequency switching due to its low on-state resistance and fast switching characteristics.
Does IXTT170N10P require a heat sink for operation?
- Yes, due to its high power handling capability, it is recommended to use a heat sink to dissipate heat effectively.
What are the thermal characteristics of IXTT170N10P?
- The thermal resistance from junction to case (RθJC) is typically low, allowing for efficient heat dissipation.
Can IXTT170N10P be used in automotive applications?
- Yes, it is suitable for automotive applications due to its high current and voltage ratings.
What are the protection features of IXTT170N10P?
- It may include features such as overcurrent protection, overtemperature protection, and short-circuit protection.
Where can I find the detailed datasheet for IXTT170N10P?
- The datasheet can be found on the manufacturer's website or through authorized distributors.