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IXXR100N60B3H1

IXXR100N60B3H1

Product Overview

Category

The IXXR100N60B3H1 belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic circuits and systems.

Characteristics

  • High voltage and current handling capability
  • Low on-state resistance
  • Fast switching speed
  • Robust and reliable performance

Package

The IXXR100N60B3H1 is typically available in a TO-220 package, ensuring efficient heat dissipation and ease of mounting.

Essence

This MOSFET is designed to provide efficient power management and control in diverse electronic devices and systems.

Packaging/Quantity

It is commonly supplied in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Voltage Rating: 600V
  • Current Rating: 100A
  • On-State Resistance: 0.036Ω
  • Gate Threshold Voltage: 2.5V
  • Power Dissipation: 300W
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IXXR100N60B3H1 features a standard pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage and current handling capacity
  • Low conduction losses
  • Fast switching characteristics
  • Enhanced thermal performance

Advantages

  • Suitable for high-power applications
  • Low on-state resistance minimizes power dissipation
  • Reliable and robust construction
  • Efficient heat dissipation due to TO-220 package

Disadvantages

  • Higher gate drive requirements compared to some lower voltage MOSFETs
  • Larger physical size due to high power handling capability

Working Principles

The IXXR100N60B3H1 operates based on the principles of field-effect transistors, utilizing its gate, source, and drain terminals to control the flow of current in high-power circuits.

Detailed Application Field Plans

The IXXR100N60B3H1 is widely used in the following applications: - Switched-mode power supplies - Motor control systems - Inverters and converters - Industrial automation equipment - Renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the IXXR100N60B3H1 include: - IRFP4668PbF - FDPF33N25T - STW75N60M2

In conclusion, the IXXR100N60B3H1 power MOSFET offers high-performance characteristics suitable for demanding high-power applications across various industries.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IXXR100N60B3H1 en soluciones técnicas

  1. What is the maximum voltage rating of IXXR100N60B3H1?

    • The maximum voltage rating of IXXR100N60B3H1 is 600V.

  2. What is the continuous drain current of IXXR100N60B3H1?

    • The continuous drain current of IXXR100N60B3H1 is 100A.

  3. What is the on-state resistance of IXXR100N60B3H1?

    • The on-state resistance of IXXR100N60B3H1 is typically 0.06 ohms.

  4. What type of package does IXXR100N60B3H1 come in?

    • IXXR100N60B3H1 comes in a TO-264 package.

  5. What are the typical applications for IXXR100N60B3H1?

    • IXXR100N60B3H1 is commonly used in motor control, power supplies, and inverters.

  6. What is the operating temperature range of IXXR100N60B3H1?

    • The operating temperature range of IXXR100N60B3H1 is -55°C to 150°C.

  7. Does IXXR100N60B3H1 have built-in protection features?

    • Yes, IXXR100N60B3H1 has built-in overcurrent and thermal protection.

  8. Can IXXR100N60B3H1 be used in automotive applications?

    • Yes, IXXR100N60B3H1 is suitable for automotive applications.

  9. What are the key advantages of using IXXR100N60B3H1 in technical solutions?

    • The key advantages include high voltage capability, low on-state resistance, and built-in protection features.

  10. Are there any recommended companion components when using IXXR100N60B3H1?

    • It is recommended to use appropriate gate drivers and heat sinks when integrating IXXR100N60B3H1 into technical solutions.