MX29F800CTTI-70G

Product Overview

Category

The MX29F800CTTI-70G belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and digital cameras.

Characteristics

• Non-volatile memory: The MX29F800CTTI-70G retains stored data even when power is turned off.
• High capacity: This flash memory chip has a capacity of 8 megabits (1 megabyte).
• Fast read and write speeds: The MX29F800CTTI-70G offers quick access to stored data, making it suitable for applications that require high-speed data transfer.
• Reliable performance: It provides reliable data storage with low power consumption.

Package

The MX29F800CTTI-70G is available in a small form factor package, commonly known as TSOP (Thin Small Outline Package). This package ensures easy integration into various electronic devices.

Essence

The essence of the MX29F800CTTI-70G lies in its ability to provide non-volatile, high-capacity storage with fast access times, making it an essential component for many electronic devices.

Packaging/Quantity

The MX29F800CTTI-70G is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package varies but is usually in the range of hundreds to thousands of units.

Specifications

• Manufacturer: Macronix International Co., Ltd.
• Part Number: MX29F800CTTI-70G
• Memory Type: NOR Flash
• Capacity: 8 Megabits (1 Megabyte)
• Operating Voltage: 2.7V - 3.6V
• Access Time: 70 nanoseconds
• Interface: Parallel
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MX29F800CTTI-70G has a total of 48 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. A16
18. A17
19. A18
20. A19
21. A20
22. A21
23. A22
24. A23
25. VSS (Ground)
26. DQ0
27. DQ1
28. DQ2
29. DQ3
30. DQ4
31. DQ5
32. DQ6
33. DQ7
34. VCC (Power)
35. WE# (Write Enable)
36. CE# (Chip Enable)
37. OE# (Output Enable)
38. RP#
39. BYTE#
40. RY/BY#
41. RESET#
42. WP#
43. NC (No Connection)
44. NC (No Connection)
45. NC (No Connection)
46. NC (No Connection)
47. NC (No Connection)
48. NC (No Connection)

Functional Features

• Erase and Program Operations: The MX29F800CTTI-70G supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Block Locking: This flash memory chip provides the option to lock specific blocks, preventing accidental modification or erasure of critical data.
• Power-Saving Modes: It offers various power-saving modes to optimize energy consumption, making it suitable for battery-powered devices.
• Error Correction: The MX29F800CTTI-70G incorporates error correction techniques to ensure data integrity and reliability.

Advantages and Disadvantages

Advantages

• High capacity storage
• Fast read and write speeds
• Non-volatile memory
• Reliable performance
• Power-saving modes

Disadvantages

• Limited endurance: Flash memory has a limited number of erase/write cycles before degradation occurs.
• Higher cost compared to other types of memory.

Working Principles

The MX29F800CTTI-70G utilizes NOR flash memory technology. It stores data in individual memory cells by trapping electrons in a floating gate. These trapped charges determine the stored data value (0 or 1). To read data, the memory controller applies appropriate voltages to the memory cells and measures the resulting current flow. Writing and erasing operations involve applying higher voltages to modify the charge level in the floating gate.

Detailed Application Field Plans

The MX29F800CTTI-70G finds applications in various electronic devices that require non-volatile data storage with fast access times.