MX29GL320EBXEI-70G

Product Overview

Category

The MX29GL320EBXEI-70G belongs to the category of flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The MX29GL320EBXEI-70G offers a storage capacity of 32 gigabits (4 gigabytes), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a high-speed interface, this flash memory chip enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The MX29GL320EBXEI-70G is designed to provide reliable and consistent performance, ensuring data integrity and longevity.
• Low power consumption: This flash memory chip is optimized for low power consumption, making it suitable for battery-powered devices.
• Compact package: The MX29GL320EBXEI-70G is available in a compact package, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MX29GL320EBXEI-70G is typically packaged in a surface-mount technology (SMT) package. It is commonly available in reels or trays, with quantities varying based on customer requirements.

Specifications

• Manufacturer: Macronix International Co., Ltd.
• Model: MX29GL320EBXEI-70G
• Memory Type: NOR Flash
• Capacity: 32 gigabits (4 gigabytes)
• Interface: Parallel
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

The MX29GL320EBXEI-70G features a 48-pin TSOP package with the following pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. OE#
45. BYTE#
46. RY/BY#
47. RESET#
48. GND

Functional Features

• High-speed data transfer: The MX29GL320EBXEI-70G supports fast read and write operations, allowing for quick access to stored data.
• Erase and program capability: This flash memory chip enables both sector erase and byte programming, providing flexibility in managing data storage.
• Error correction: The MX29GL320EBXEI-70G incorporates error correction techniques to ensure data integrity and reliability.
• Block locking: Certain sectors of the memory can be locked to prevent accidental modification or erasure.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package

Disadvantages

• Limited endurance: Flash memory has a limited number of erase/write cycles before it may become unreliable.
• Higher cost compared to other types of memory.

Working Principles

The MX29GL320EBXEI-70G utilizes NOR flash memory technology. It stores data in non-volatile memory cells, which retain information even when power is removed. The memory cells are organized into sectors, allowing for efficient read, write, and erase operations. When data is written, the memory cells are programmed with electrical charges. Reading data involves detecting the presence or absence of charges in the memory cells.

Detailed Application Field Plans

The MX29GL320EBXEI-70G is widely used in various electronic devices that require reliable and high-capacity data storage. Some common application fields include:

1. Smartphones and tablets: These devices rely on flash memory chips to store operating systems, applications, and user data.
2. Digital cameras: Flash memory provides fast and reliable storage for capturing and storing photos and videos