23A1024-I/ST Product Overview

Introduction

The 23A1024-I/ST is a versatile integrated circuit that belongs to the category of non-volatile memory devices. This entry provides an in-depth overview of the product, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Non-volatile Memory Device
• Use: Data storage and retrieval in electronic systems
• Characteristics: High-speed read and write operations, low power consumption, reliable data retention
• Package: Integrated Circuit (IC)
• Essence: Provides non-volatile storage for critical system data
• Packaging/Quantity: Available in surface mount packaging, quantity varies based on supplier

Specifications

• Capacity: 1 Megabit (128K x 8-bit)
• Interface: SPI (Serial Peripheral Interface)
• Operating Voltage: 2.7V to 5.5V
• Operating Temperature: -40°C to 85°C
• Data Retention: Minimum 100 years
• Write Endurance: Minimum 100,000 cycles

Detailed Pin Configuration

The 23A1024-I/ST features a standard 8-pin package with the following pinout: 1. Chip Select (/CS) 2. Serial Clock (SCK) 3. Serial Data Input/Output (SI/O) 4. Ground (GND) 5. No Connection (NC) 6. Write Protect (/WP) 7. VCC (Power Supply) 8. Hold (/HOLD)

Functional Features

• High-Speed Operation: Enables rapid data access and transfer
• Low Power Consumption: Ideal for battery-powered applications
• SPI Interface: Facilitates easy integration into various systems
• Hardware Write Protection: Prevents accidental data modification
• Reliable Data Retention: Ensures long-term storage integrity

Advantages and Disadvantages

Advantages

• Fast read and write operations
• Low power consumption
• Robust data retention
• Easy integration with SPI interface

Disadvantages

• Limited capacity compared to other memory devices
• Higher cost per bit compared to larger capacity alternatives

Working Principles

The 23A1024-I/ST utilizes a combination of floating gate and tunnel oxide technologies to achieve non-volatile data storage. When data is written, charge is trapped in the floating gate, altering the threshold voltage of the memory cell. During read operations, the threshold voltage is sensed to determine the stored data.

Detailed Application Field Plans

The 23A1024-I/ST is well-suited for a wide range of applications, including but not limited to: - Embedded systems - Consumer electronics - Industrial automation - Automotive systems - Medical devices

Detailed and Complete Alternative Models

• AT25DF041A: Similar SPI-based flash memory device with higher capacity
• M25P16: SPI NOR flash memory offering larger storage space
• W25Q80BV: Cost-effective SPI flash memory with lower capacity

In conclusion, the 23A1024-I/ST offers reliable non-volatile memory storage with high-speed operation and low power consumption, making it an ideal choice for various electronic systems.

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