Micron Technology Inc.
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JS28F640P30BF75A
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JS28F640P30BF75A

Product Overview

  • Category: Flash Memory
  • Use: Data storage and retrieval in electronic devices
  • Characteristics:
    • Non-volatile memory
    • High-speed read and write operations
    • Large storage capacity
    • Low power consumption
  • Package: BGA (Ball Grid Array)
  • Essence: Advanced flash memory technology for reliable data storage
  • Packaging/Quantity: Individually packaged, quantity varies based on customer requirements

Specifications

  • Memory Type: NOR Flash
  • Density: 64 Megabits (8 Megabytes)
  • Voltage Supply: 2.7V to 3.6V
  • Operating Temperature: -40°C to +85°C
  • Interface: Parallel
  • Access Time: 70 ns
  • Endurance: 100,000 program/erase cycles
  • Data Retention: Up to 20 years

Detailed Pin Configuration

The JS28F640P30BF75A has a total of 48 pins arranged as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. A26
  29. A27
  30. A28
  31. A29
  32. A30
  33. A31
  34. CE#
  35. WE#
  36. RE#
  37. WP#
  38. BYTE#
  39. RY/BY#
  40. VSS
  41. DQ0
  42. DQ1
  43. DQ2
  44. DQ3
  45. DQ4
  46. DQ5
  47. DQ6
  48. DQ7

Functional Features

  • High-speed read and write operations for efficient data access
  • Reliable data storage with a long data retention period
  • Low power consumption for energy-efficient operation
  • Built-in protection mechanisms to prevent data corruption
  • Easy integration into various electronic devices due to the parallel interface

Advantages and Disadvantages

Advantages: - Fast read and write operations - Large storage capacity - Low power consumption - Long data retention period - Reliable data storage

Disadvantages: - Limited endurance (100,000 program/erase cycles) - Higher cost compared to other memory technologies

Working Principles

The JS28F640P30BF75A utilizes NOR flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is detected, allowing retrieval of the stored information. The parallel interface enables fast data transfer between the memory and the device it is integrated into.

Detailed Application Field Plans

The JS28F640P30BF75A is widely used in various electronic devices that require non-volatile data storage, such as:

  1. Embedded systems
  2. Automotive electronics
  3. Industrial control systems
  4. Consumer electronics
  5. Networking equipment

Detailed and Complete Alternative Models

  1. JS28F640P33BFE
  2. JS28F640P33BFI
  3. JS28F640P33BFL
  4. JS28F640P33BFT
  5. JS28F640P33BFS

These alternative models offer similar specifications and functionality to the JS28F640P30BF75A, providing customers with options based on their specific requirements.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de JS28F640P30BF75A en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of JS28F640P30BF75A in technical solutions:

  1. Q: What is JS28F640P30BF75A? A: JS28F640P30BF75A is a specific model of flash memory chip manufactured by Intel.

  2. Q: What is the capacity of JS28F640P30BF75A? A: The JS28F640P30BF75A has a capacity of 64 megabytes (MB).

  3. Q: What is the interface used for connecting JS28F640P30BF75A to a microcontroller or processor? A: JS28F640P30BF75A uses a parallel interface, typically connected using address, data, and control lines.

  4. Q: What voltage does JS28F640P30BF75A operate at? A: JS28F640P30BF75A operates at a voltage range of 2.7V to 3.6V.

  5. Q: Can JS28F640P30BF75A be used as a boot device? A: Yes, JS28F640P30BF75A can be used as a boot device in many embedded systems.

  6. Q: What is the typical access time of JS28F640P30BF75A? A: The typical access time of JS28F640P30BF75A is around 70 nanoseconds (ns).

  7. Q: Does JS28F640P30BF75A support random access read and write operations? A: Yes, JS28F640P30BF75A supports random access read and write operations.

  8. Q: Is JS28F640P30BF75A suitable for high-temperature environments? A: Yes, JS28F640P30BF75A is designed to operate reliably in high-temperature environments.

  9. Q: Can JS28F640P30BF75A be used in automotive applications? A: Yes, JS28F640P30BF75A is suitable for automotive applications due to its high reliability and temperature range.

  10. Q: Are there any specific programming requirements for JS28F640P30BF75A? A: Yes, JS28F640P30BF75A requires specific programming algorithms and voltage levels for proper operation. The datasheet provides detailed information on programming requirements.

Please note that the answers provided here are general and may vary depending on the specific application and requirements. It is always recommended to refer to the official datasheet and consult with technical experts for accurate and up-to-date information.