M58LT128HSB8ZA6F TR

Product Overview

Category

The M58LT128HSB8ZA6F TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and digital cameras.

Characteristics

• High-speed data access
• Non-volatile memory
• Low power consumption
• Compact size

Package

The M58LT128HSB8ZA6F TR is packaged in a small form factor, typically in a surface mount package (SMP) or ball grid array (BGA) package.

Essence

The essence of this product lies in its ability to store and retain digital information even when power is removed from the device.

Packaging/Quantity

The M58LT128HSB8ZA6F TR is usually sold in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Flash memory
• Capacity: 128 megabits (16 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The M58LT128HSB8ZA6F TR has a specific pin configuration that enables its proper functioning within a circuit. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. CS: Chip select
4. SCK: Serial clock input
5. SI: Serial data input
6. SO: Serial data output
7. WP: Write protect
8. HOLD: Hold input

Functional Features

• High-speed data transfer rate
• Flexible erase and program operations
• Sector-based architecture for efficient data management
• Hardware and software write protection options
• Low power consumption in standby mode

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Non-volatile memory ensures data retention even during power loss
• Compact size allows for integration into various electronic devices
• Flexible erase and program operations provide versatility in data management

Disadvantages

• Limited capacity compared to other storage technologies
• Finite erase/program cycles may limit the lifespan of the device
• Relatively higher cost per unit compared to traditional hard drives

Working Principles

The M58LT128HSB8ZA6F TR utilizes flash memory technology, which is based on the principle of trapping electric charges within a floating gate structure. These trapped charges represent binary data (0s and 1s) and can be accessed and modified through specific electrical signals.

When data is written to the memory, an electrical charge is applied to the floating gate, altering its state. This change in charge determines the stored data. Reading the data involves detecting the presence or absence of charges in the floating gate.

Detailed Application Field Plans

The M58LT128HSB8ZA6F TR finds applications in various electronic devices that require non-volatile storage capabilities. Some potential application fields include:

1. Embedded systems: Used as a storage medium in microcontrollers and IoT devices.
2. Consumer electronics: Integrated into smartphones, tablets, digital cameras, and portable media players.
3. Automotive: Utilized in infotainment systems, navigation units, and engine control modules.
4. Industrial automation: Employed in programmable logic controllers (PLCs), human-machine interfaces (HMIs), and data loggers.

Detailed and Complete Alternative Models

1. M58LT256HSB8ZA6F TR: A higher capacity variant with 256 megabits (32 megabytes) of storage.
2. M58LT64HSB8ZA6F TR: A lower capacity variant with 64 megabits (8 megabytes) of storage.
3. M58LT512HSB8ZA6F TR: An even higher capacity variant with 512 megabits (64 megabytes) of storage.

These alternative models offer different storage capacities to cater to diverse application requirements.

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