MT28F004B3VG-8 B

Product Overview

Category

The MT28F004B3VG-8 B belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and digital cameras.

Characteristics

• Non-volatile memory: The MT28F004B3VG-8 B retains stored data even when power is turned off.
• High-speed operation: It offers fast read and write speeds, allowing for efficient data transfer.
• Large storage capacity: With a capacity of 4 megabits (512 kilobytes), it can store a significant amount of data.
• Reliable performance: The flash memory is designed to be durable and resistant to physical damage.

Package

The MT28F004B3VG-8 B is available in a compact package that ensures easy integration into electronic devices. It is commonly packaged in a small surface-mount device (SMD) format.

Essence

The essence of the MT28F004B3VG-8 B lies in its ability to provide reliable and high-speed data storage in a compact form factor.

Packaging/Quantity

This product is typically sold in reels or trays containing multiple units. The exact quantity may vary depending on the manufacturer's packaging specifications.

Specifications

• Capacity: 4 megabits (512 kilobytes)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns
• Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

The MT28F004B3VG-8 B has a standard pin configuration with the following pins:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address input pins
4. DQ0-DQ7: Data input/output pins
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control

Functional Features

• Erase and Program Operations: The MT28F004B3VG-8 B allows for both erasing and programming of data, providing flexibility in managing stored information.
• Block Architecture: The flash memory is organized into multiple blocks, allowing for efficient management of data storage and retrieval.
• Error Correction Code (ECC): This feature helps detect and correct errors that may occur during data transfer, ensuring data integrity.

Advantages and Disadvantages

Advantages

• High-speed operation enables fast data transfer.
• Large storage capacity accommodates a significant amount of data.
• Non-volatile memory retains data even without power.
• Compact package facilitates easy integration into electronic devices.

Disadvantages

• Limited erase/program cycles may affect the lifespan of the memory.
• Higher cost compared to other types of memory.

Working Principles

The MT28F004B3VG-8 B utilizes a floating-gate transistor technology to store data. It employs a combination of electrical charges to represent binary values (0s and 1s). During programming, charges are injected or removed from the floating gate, altering its electrical characteristics. These changes can be detected during read operations, allowing for data retrieval.

Detailed Application Field Plans

The MT28F004B3VG-8 B finds applications in various fields, including: 1. Consumer Electronics: Used in smartphones, tablets, digital cameras, and portable media players for data storage. 2. Computers: Employed in laptops, desktops, and servers for storing operating systems, applications, and user data. 3. Automotive: Integrated into automotive infotainment systems, navigation units, and engine control modules for data storage. 4. Industrial: Utilized in industrial automation systems, robotics, and control units for storing critical data.

Detailed and Complete Alternative Models

1. MT28F004B3VG-8 A
2. MT28F004B3VG-8 C
3. MT28F004B3VG-8 D
4. MT28F004B3VG-8 E

These alternative models offer similar specifications and functionality to the MT28F004B3VG-8 B, providing options for different application requirements.

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