MT29C1G12MAAJYAMD-5 IT TR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed operation
  • Low power consumption
  • Small form factor
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile memory storage
• Packaging/Quantity: Tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Gigabit (1 Gb)
• Organization: 128 Megabytes (128 MB) x 8 bits
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Speed: Up to 50 MHz

Detailed Pin Configuration

The MT29C1G12MAAJYAMD-5 IT TR has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | A0 | Address Input | | 2 | A1 | Address Input | | 3 | A2 | Address Input | | ... | ... | ... | | 48 | VCC | Power Supply (3.3V) | | 49 | WE# | Write Enable | | 50 | CE# | Chip Enable | | ... | ... | ... |

Functional Features

• High-speed data transfer
• Reliable data retention
• Block erase and program operations
• Error correction code (ECC) support
• Wear-leveling algorithm for extended lifespan
• Bad block management

Advantages

• Fast read and write speeds
• Low power consumption
• Compact size
• High reliability and durability
• Wide operating temperature range

Disadvantages

• Limited capacity compared to other memory technologies
• Higher cost per unit compared to traditional hard drives

Working Principles

The MT29C1G12MAAJYAMD-5 IT TR is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density storage. The memory cells are made up of floating-gate transistors that can hold an electric charge, representing the stored data.

To read data from the memory, the appropriate address is provided, and the stored charge in the selected memory cell is measured. To write data, the charge in the target memory cell is adjusted based on the desired data value. Erasing data involves clearing the charge in specific blocks of memory cells.

Detailed Application Field Plans

The MT29C1G12MAAJYAMD-5 IT TR is widely used in various electronic devices and systems, including: - Solid-state drives (SSDs) - USB flash drives - Digital cameras - Mobile phones - Tablets - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

• MT29C1G08MAAWP-6 IT: 512 Megabit (512 Mb) capacity, x8 organization, parallel interface
• MT29C1G16MAAKJAJC-5 IT: 2 Gigabit (2 Gb) capacity, x8 organization, parallel interface
• MT29C1G32MAAKLJAJC-5 IT: 4 Gigabit (4 Gb) capacity, x8 organization, parallel interface

Note: This is not an exhaustive list of alternative models, and there may be other options available from different manufacturers.

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