Micron Technology Inc.
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MT29F128G08AMAAAC5-ITZ:A TR

MT29F128G08AMAAAC5-ITZ:A TR

Product Overview

Category

The MT29F128G08AMAAAC5-ITZ:A TR belongs to the category of NAND Flash memory devices.

Use

It is used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High-speed data transfer
  • Non-volatile memory
  • Large storage capacity
  • Low power consumption

Package

The MT29F128G08AMAAAC5-ITZ:A TR is typically available in a small form factor package suitable for surface mount technology (SMT) assembly.

Essence

The essence of this product lies in its ability to store and retrieve data reliably and efficiently in electronic devices.

Packaging/Quantity

The MT29F128G08AMAAAC5-ITZ:A TR is commonly packaged in reels containing a specific quantity of units, typically ranging from hundreds to thousands per reel.

Specifications

  • Storage Capacity: 128 gigabits (16 gigabytes)
  • Interface: Parallel or serial NAND interface
  • Operating Voltage: 2.7V - 3.6V
  • Operating Temperature: -40°C to 85°C
  • Data Transfer Rate: Up to 200 megabytes per second

Detailed Pin Configuration

The detailed pin configuration of the MT29F128G08AMAAAC5-ITZ:A TR includes pins for power supply, data input/output, control signals, and other interface-related functions. A comprehensive pinout diagram is provided in the product datasheet.

Functional Features

  • Error Correction: Built-in error correction algorithms ensure data integrity.
  • Wear Leveling: Distributes write and erase cycles evenly across memory cells, extending the lifespan of the device.
  • Bad Block Management: Automatically identifies and manages defective memory blocks to maintain overall reliability.

Advantages and Disadvantages

Advantages

  • High storage capacity
  • Fast data transfer rates
  • Low power consumption
  • Compact form factor

Disadvantages

  • Limited endurance compared to some other types of non-volatile memory
  • Susceptible to physical damage if mishandled

Working Principles

The MT29F128G08AMAAAC5-ITZ:A TR operates on the principles of NAND flash memory, utilizing electrically programmable and erasable memory cells to store and retrieve digital data.

Detailed Application Field Plans

The MT29F128G08AMAAAC5-ITZ:A TR is widely used in applications requiring high-capacity, non-volatile data storage, including: - Mobile devices - Digital cameras - Solid-state drives (SSDs) - Industrial control systems - Automotive infotainment systems

Detailed and Complete Alternative Models

Some alternative models to the MT29F128G08AMAAAC5-ITZ:A TR include: - Samsung K9K8G08U0M - Micron MT29F128G08CFABAWP - Toshiba TH58NVG7D2FLA89

In conclusion, the MT29F128G08AMAAAC5-ITZ:A TR is a versatile NAND flash memory device with high storage capacity, fast data transfer rates, and low power consumption, making it suitable for a wide range of electronic applications.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de MT29F128G08AMAAAC5-ITZ:A TR en soluciones técnicas

  1. What is the MT29F128G08AMAAAC5-ITZ:A TR?

    • The MT29F128G08AMAAAC5-ITZ:A TR is a NAND flash memory device commonly used in embedded systems and other technical solutions.

  2. What are the key features of the MT29F128G08AMAAAC5-ITZ:A TR?

    • The MT29F128G08AMAAAC5-ITZ:A TR features a capacity of 128 gigabits (16 gigabytes), a high-speed interface, and advanced NAND flash technology for reliable data storage.

  3. What are the typical applications of the MT29F128G08AMAAAC5-ITZ:A TR?

    • This NAND flash memory device is commonly used in automotive, industrial, and networking applications, as well as in consumer electronics and other embedded systems.

  4. What is the operating voltage range of the MT29F128G08AMAAAC5-ITZ:A TR?

    • The MT29F128G08AMAAAC5-ITZ:A TR operates within a voltage range of 2.7V to 3.6V, making it suitable for various power supply configurations.

  5. What is the data transfer rate of the MT29F128G08AMAAAC5-ITZ:A TR?

    • The MT29F128G08AMAAAC5-ITZ:A TR offers high-speed data transfer rates, enabling efficient read and write operations in technical solutions.

  6. Does the MT29F128G08AMAAAC5-ITZ:A TR support wear leveling and error correction?

    • Yes, this NAND flash memory device incorporates wear leveling and advanced error correction mechanisms to enhance data reliability and longevity.

  7. Is the MT29F128G08AMAAAC5-ITZ:A TR compatible with industry-standard interfaces?

    • Yes, the MT29F128G08AMAAAC5-ITZ:A TR is designed to be compatible with standard NAND flash interfaces, facilitating integration into diverse technical solutions.

  8. What are the temperature specifications for the MT29F128G08AMAAAC5-ITZ:A TR?

    • The MT29F128G08AMAAAC5-ITZ:A TR is specified to operate within a wide temperature range, making it suitable for both commercial and industrial environments.

  9. Does the MT29F128G08AMAAAC5-ITZ:A TR support secure data storage?

    • Yes, this NAND flash memory device offers features for secure data storage, including hardware-based protection and encryption options.

  10. Are there any specific design considerations when integrating the MT29F128G08AMAAAC5-ITZ:A TR into a technical solution?

    • When integrating the MT29F128G08AMAAAC5-ITZ:A TR, it's important to consider factors such as power supply stability, signal integrity, and proper implementation of NAND flash management techniques to optimize performance and reliability.